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Naftho[2,1-b:6,5-b']difuran: un motivo versátil disponible para transistores de efecto de campo orgánico

Chikahiko Mitsui¹, Junshi Soeda, Kazumoto Miwa

¹Department of Chemistry, School of Science, The University of Tokyo, Tokyo, Japan.

Journal of the American Chemical Society

|March 15, 2012

Resumen

Los nuevos derivados del naftodifurano actúan como semiconductores de tipo p de alto rendimiento. Estos materiales permiten un transporte eficiente de carga en la electrónica orgánica, logrando altas movilidades y relaciones de encendido/apagado en los transistores.

Área de la Ciencia:

La electrónica orgánica es la electrónica orgánica.
Ciencia de los materiales ciencia de los materiales.
Física de los semiconductores física de los semiconductores.

Sus antecedentes:

El desarrollo de semiconductores orgánicos de tipo p eficientes es crucial para el avance de la electrónica orgánica.
Los transistores orgánicos de efecto de campo (OFET) procesados en solución ofrecen métodos de fabricación rentables.

Objetivo del estudio:

Introducir nuevos derivados de naftó[2,1-b:6,5-b']difurán como semiconductores de tipo p.
Investigar su rendimiento en transistores orgánicos monocristalinos de efecto de campo procesados en solución.

Principales métodos:

Síntesis de derivados del naftó[2,1-b:6,5-b']difurán.
Fabricación y caracterización de transistores orgánicos monocristalinos de efecto de campo procesados en solución.
Análisis de las propiedades de transporte de carga y correlación con la estructura molecular y el empaque.

Principales resultados:

Alcanzó altas movilidades de agujero de hasta 3,6 cm2) V{-1) s{-1).
Se ha demostrado que las relaciones de corriente encendida/apagada son altas (Encendiendo/Apagando).
El rendimiento se atribuye al denso empaque de cristales, a la gran superposición intermolecular π-orbital y a la pequeña energía de reorganización debido al radio del átomo de oxígeno.

Conclusiones:

Los derivados de nafto[2,1-b:6,5-b']difurano representan una clase prometedora de semiconductores de tipo p.
El diseño molecular facilita excelentes propiedades de transporte de carga para aplicaciones electrónicas orgánicas.
El procesamiento de soluciones permite la fabricación eficiente de transistores orgánicos de alto rendimiento.

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