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El complejo radical aniónico azoico del rodio como dispositivo de conmutación de memoria molecular: aislamiento,
Nanda D Paul1, Utpal Rana, Sreetosh Goswami
1Department of Inorganic Chemistry, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India.
Journal of the American Chemical Society
|April 3, 2012
Resumen
Dos complejos raros de di-radicales de aniones azo-Rh (III) exhiben una excelente conmutación de memoria para aplicaciones RAM/ROM. Estos sistemas poseen un estado triplo predominante con radicales acoplados ferromagnéticamente.
Área de la Ciencia:
- Química Inorgánica La Química Inorgánica es la química inorgánica.
- Ciencia de los materiales Ciencia de los materiales.
- La electrónica molecular es la electrónica molecular.
Sus antecedentes:
- Los compuestos azoicos son ligandos versátiles en la química de la coordinación.
- Los complejos dirádicos ofrecen propiedades electrónicas y magnéticas únicas.
- El desarrollo de nuevos materiales para aplicaciones electrónicas avanzadas es crucial.
Objetivo del estudio:
- Para sintetizar y caracterizar complejos raros de radicales diradicales de aniones azoicos de Rh (III).
- Para investigar las propiedades de conmutación de memoria de estos nuevos complejos.
- Para dilucidar la estructura electrónica y el comportamiento magnético de los sistemas diradicales.
Principales métodos:
- Cristalografía de rayos X para la determinación estructural.
- Mediciones de susceptibilidad magnética de temperatura variable.
- Voltametría cíclica y espectroscopia de resonancia paramagnética de electrones.
- Cálculos de la teoría funcional de la densidad (DFT).
Principales resultados:
- Síntesis exitosa de dos complejos diradicales de aniones azoicos Rh (III) únicos.
- Demostró excelentes propiedades de conmutación de memoria con altas relaciones de encendido/apagado.
- El análisis de la estructura electrónica reveló un estado fundamental triplo predominante.
- Se confirmó el acoplamiento ferromagnético entre los dos centros radicales.
Conclusiones:
- Los complejos Rh (III) reportados son candidatos prometedores para los dispositivos de memoria de acceso aleatorio (RAM) y de memoria de solo lectura (ROM).
- La naturaleza diradical y el acoplamiento ferromagnético son clave para su comportamiento de conmutación de memoria.
- Este trabajo expande el alcance de la química diradical y su potencial en la electrónica molecular.
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