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La acción del transistor de espín a través de las transiciones sintonizables de Landau-Zener

C Betthausen1, T Dollinger, H Saarikoski

  • 1Department of Experimental and Applied Physics, Regensburg University, 93040 Regensburg, Germany.

Science (New York, N.Y.)
|July 24, 2012
PubMed
Resumen

Este estudio introduce un nuevo diseño de transistor de espín que utiliza la propagación de espín adiabática para mejorar la eficiencia. El nuevo enfoque demuestra un robusto transporte de espín a más de 50 micrómetros, superando las limitaciones de los actuales diseños de interacción espín-órbita.

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