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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Oportunidad de los materiales de ferrita de spinel en aplicaciones de dispositivos de memoria no volátil basado en
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China.
Journal of the American Chemical Society
|August 31, 2012
Resumen
Las ferritas de espinel son prometedoras para dispositivos de memoria no volátil debido a sus excelentes características de conmutación resistiva. Este estudio aclara el mecanismo de formación de filamentos en las estructuras Pt/NiFe(2)O(4)/Pt.
Área de la Ciencia:
- Ciencia de los materiales Ciencia de los materiales.
- Física del estado sólido Física del estado sólido
- Física de los dispositivos Física de los dispositivos
Sus antecedentes:
- Las ferritas de spinel están siendo exploradas para aplicaciones de memoria no volátil.
- El comportamiento de conmutación resistiva es clave para la funcionalidad del dispositivo de memoria.
Objetivo del estudio:
- Para demostrar el potencial de las ferritas de spinel en dispositivos de memoria no volátiles.
- Para investigar el rendimiento de conmutación resistiva y el mecanismo de una estructura Pt/NiFe(2)O(4)/Pt.
Principales métodos:
- Fabricación de los dispositivos Pt/NiFe(2)O(4) /Pt.
- Caracterización del rendimiento de conmutación resistiva (tensión, retención, resistencia).
- Análisis de los mecanismos de conducción (emisión de Ohm, Schottky) y las propiedades dependientes de la temperatura.
Principales resultados:
- La estructura Pt/NiFe(2)O(4)/Pt exhibió un bajo voltaje de funcionamiento, un alto rendimiento del dispositivo, una larga retención (10^5 s) y una buena resistencia (2,2 × 10^4 ciclos).
- La conducción ómica dominó el estado de baja resistencia y el estado de alta resistencia de baja tensión.
- La emisión de Schottky se observó en el estado de alta resistencia de alto voltaje.
Conclusiones:
- La conmutación resistiva en los dispositivos Pt/NiFe(2)O(4)/Pt se atribuye a la formación y ruptura de filamentos conductores.
- Las vacantes de oxígeno y los efectos redox de cationes son cruciales para el mecanismo de conmutación.
- Las ferritas de spinel son candidatos viables para aplicaciones avanzadas de memoria no volátil.
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