Video Experimental Relacionado

Updated: Apr 27, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Valleytronics. también conocido como. El efecto Hall del valle en los transistores MoS2

K F Mak¹, K L McGill², J Park³

¹Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA. Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, USA. plm23@cornell.edu km627@cornell.edu.

Science (New York, N.Y.)

|June 28, 2014

Resumen

Los investigadores observaron el efecto Hall del valle (VHE, por sus siglas en inglés) en transistores monocapa MoS2. La luz circularmente polarizada controlaba el VHE, demostrando el grado de libertad del valle para la electrónica futura.

Área de la Ciencia:

Física de la materia condensada Física de la materia condensada
Ciencia de los materiales Ciencia de los materiales.
Nanotecnología La nanotecnología es la nanotecnología.

Sus antecedentes:

Los electrones en las redes de panal de abeja 2D tienen un grado de libertad del valle (DOF).
Se predice que el signo del efecto Hall anómalo dependerá del índice del valle.
Valleytronics ofrece el potencial para nuevos dispositivos electrónicos.

Objetivo del estudio:

Para observar experimentalmente el efecto Hall del valle (VHE).
Para investigar el papel del DOF del valle a cargo del transporte.
Para explorar el control optoelectrónico de los fenómenos dependientes del valle.

Principales métodos:

Fabricación de transistores de una sola capa MoS2.
Iluminación con luz circularmente polarizada.
Medición de la tensión anómala de Hall.

Principales resultados:

Observación de un voltaje Hall anómalo finito en la monocapa MoS2.2.
La señal del VHE era controlada por una hélice ligera.
No se observó VHE en la bicapa MoS2 debido a la simetría de inversión de cristal.

Conclusiones:

Confirmación experimental del efecto Hall del valle.
Demostración del control optoelectrónico sobre la polarización del valle.
Abre vías para el procesamiento de información basado en valles en electrónica y optoelectrónica de próxima generación.

Más Videos Relacionados

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Videos de Conceptos Relacionados

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...