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Mejora de la conductividad eléctrica en un espiro-bis (((fenalenil) radical de boro sólido molecular dopado por

Sushanta K Pal¹, Pradip Bag, Mikhail E Itkis

¹Department of Chemistry and Chemical & Environmental Engineering, University of California , Riverside, California 92521, United States.

Journal of the American Chemical Society

|October 2, 2014

Resumen

El dopaje de conductores orgánicos con berilio ([PLY(O,O) ]2Be) mejora la conductividad mediante la introducción de agujeros en las redes radicales de boro ([PLY(O,O) ]2B). Esta sustitución mejora las propiedades eléctricas sin alterar significativamente la estructura de estado sólido.

Área de la Ciencia:

Ciencia de los materiales Ciencia de los materiales.
Electrónica orgánica y electrónica orgánica.
Química del estado sólido.

Sus antecedentes:

Los conductores orgánicos son materiales con una conductividad eléctrica similar a los metales.
Spiro-bis (((phenalenyl) radicales de boro ([PLY (((O,O) ]2B) forman una red huésped con propiedades de espín únicas.
El dopaje es una estrategia común para afinar las propiedades electrónicas de los materiales.

Objetivo del estudio:

Investigar el efecto del dopaje de sustitución en la conductividad de los conductores orgánicos basados en el radical espiro-bis (fenalenil) boro.
Comprender cómo la introducción de agujeros a través del dopaje influye en la estructura electrónica y el mecanismo de conducción.
Para explorar la formación de soluciones de estado sólido a través de la co-cristalización.

Principales métodos:

Co-cristalización del radical de boro ([PLY(O,O) ]2B) de la espiro-bis(9-oxidofenalenona con el berilio ([PLY(O,O) ]2Be) de la espiro-bis ((9-oxidofenalenona) por cristalización conjunta del radical de boro ([PLY(O,O) 2B) con el berilio ([PLY(O,O) 2Be).
Formación de soluciones en estado sólido con diferentes composiciones ([PLY(O,O) ]2B(1-x)Be(x)).
Medición de la conductividad eléctrica y la energía de activación.

Principales resultados:

Aumento sistemático de la conductividad eléctrica con el aumento de la concentración de dopante (x).
Disminución de la energía de activación del proceso de conducción.
Minimal perturbación de la estructura en estado sólido durante el dopaje.
La estructura electrónica es consistente con el modelo de enlace de valencia resonante.

Conclusiones:

El dopaje de sustitución con [PLY(O,O) ]2Be introduce efectivamente agujeros y mejora la conductividad en los conductores orgánicos [PLY(O,O) ]2B.
Los cambios observados en la conductividad y la energía de activación apoyan el modelo de enlace de valencia resonante para la estructura electrónica.
La cocristalización ofrece una ruta viable para crear materiales electrónicos orgánicos sintonizables.

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