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Updated: Apr 18, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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Mineral bidimensional [Pb2BiS3] [AuTe2]: portadores de carga de alta movilidad en capas de un solo átomo de espesor

Lei Fang1, Jino Im, Constantinos C Stoumpos

  • 1†Department of Chemistry, ‡Department of Physics and Astronomy, and §Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.

Journal of the American Chemical Society
|January 23, 2015
PubMed
Resumen

La buckhornite natural, [Pb2BiS3] [AuTe2], alberga portadores bidimensionales (2D) en capas de un solo átomo de espesor. Este novedoso semimetal 2D exhibe una alta movilidad del portador y propiedades electrónicas similares al grafeno.

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