Jove
Visualize
Contáctanos
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas

Videos de Conceptos Relacionados

Characteristics of MOSFET01:17

Characteristics of MOSFET

1.3K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.3K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
Field Effect Transistor01:29

Field Effect Transistor

1.7K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.7K
MOSFET01:16

MOSFET

1.7K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.7K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

815
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
815
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.3K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.3K

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por
Same author

Mapping structure-property relationships in a 6-oxo-verdazyl radical by variable pressure crystallography and density functional theory.

Acta crystallographica Section B, Structural science, crystal engineering and materials·2026
Same author

[FeFe]-hydrogenase biomimics incorporating redox-active ligands: tuning the oxidation chemistry of ferrocene-dichalcogenolate-bridged centres <i>via</i> phosphine substitution.

Dalton transactions (Cambridge, England : 2003)·2026
Same author

Nature and Dynamics of the Excited States of Ethynyl-Functionalized Naphthalimide-Phenanthroline Re(I) Complexes Studied by TA and TRIR Spectroscopies.

The journal of physical chemistry. B·2026
Same author

Charge transport through linear carbon atomic chains.

Nature chemistry·2026
Same author

Application of Ag-Enriched Nanostructures Through Ga<sup>+</sup> Irradiation of Silver Butyrate Films in Surface-Enhanced Raman Spectroscopy (SERS).

Small methods·2026
Same author

Conductive cobalt-based deposits grown by Cryo-FEBID for application as top-contact electrodes in large-area molecular electronic devices.

Microsystems & nanoengineering·2026
Same journal

Carbonylative Aminative Suzuki-Miyaura Coupling: Pd-Catalyzed Synthesis of Amides from Vinyl/Aryl Halides and Boronic Acids.

Journal of the American Chemical Society·2026
Same journal

Divergent Asymmetric Synthesis of Glutinosasins A-E.

Journal of the American Chemical Society·2026
Same journal

Ultrastrong Polyketone Hot-Melt Adhesives Enabled by Ni-Catalyzed Carbonylative Polymerization.

Journal of the American Chemical Society·2026
Same journal

Programmable Anomalous Photovoltaics Enabled by Light-Electric Dual-Field Control.

Journal of the American Chemical Society·2026
Same journal

Biomimetic Redox-Mediated Proton Relay in Nanoreactors for Photocatalysis.

Journal of the American Chemical Society·2026
Same journal

The Sulfur Monoxide-Water Complex.

Journal of the American Chemical Society·2026
Ver todos los artículos relacionados

Video Experimental Relacionado

Updated: Mar 31, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Transistores electroquímicos de una sola molécula con acoplamiento de puerta optimizado

Henrry M Osorio1, Samantha Catarelli2, Pilar Cea1,3

  • 1Departamento de Química Física, Facultad de Ciencias, Universidad de Zaragoza , 50009 Zaragoza, Spain.

Journal of the American Chemical Society
|October 22, 2015
PubMed
Resumen
Este resumen es generado por máquina.

Los líquidos iónicos permiten una conductividad de una sola molécula muy eficaz. Esta investigación demuestra que los líquidos iónicos son medios superiores para el cerramiento electroquímico de puentes moleculares en comparación con los electrolitos acuosos.

Más Videos Relacionados

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

835

Videos de Experimentos Relacionados

Last Updated: Mar 31, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

835

Área de la Ciencia:

  • La electroquímica
  • La electrónica molecular
  • Ciencias de los materiales

Sus antecedentes:

  • La electrónica de una sola molécula investiga el transporte de carga a través de moléculas individuales.
  • Las compuertas electroquímicas modulan la conductividad molecular utilizando un potencial de electrodo.
  • Los puentes moleculares de Viologen son sistemas redox-activos adecuados para estudios de transporte de carga.

Objetivo del estudio:

  • Examinar las puertas electroquímicas a nivel de una sola molécula utilizando puentes moleculares de viógenos.
  • Para comparar la eficacia de los líquidos iónicos frente a los electrolitos acuosos para el bloqueo de una sola molécula.
  • Para racionalizar los cambios de conductividad observados utilizando un modelo electroquímico.

Principales métodos:

  • Mediciones de la conductividad de una sola molécula.
  • Control del potencial electroquímico.
  • Utilizando líquidos iónicos como el medio electrolito.
  • Análisis mediante un modelo de transporte de carga electroquímica en dos etapas.

Principales resultados:

  • Se observó un pico de conductividad claro y agudo en líquidos iónicos, a diferencia de los electrolitos acuosos.
  • El sistema de líquido iónico exhibió un parámetro de acoplamiento de puerta totalmente efectivo (ξ = 1).
  • El acoplamiento de la puerta en líquidos iónicos fue significativamente mayor que en electrolitos acuosos (ξ = 0,2).

Conclusiones:

  • Los líquidos iónicos son medios altamente efectivos para el control electroquímico de una sola molécula.
  • El comportamiento de puertas observado está bien descrito por un modelo electroquímico de dos pasos.
  • Los líquidos iónicos superan a los medios acuosos y las plataformas de estado sólido para el control de conductividad molecular.