Jove
Visualize
Contáctanos
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas

Videos de Conceptos Relacionados

Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

6.4K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
6.4K
MOS Capacitor01:25

MOS Capacitor

1.7K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K
Valence Bond Theory02:42

Valence Bond Theory

11.5K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
11.5K
Ferromagnetism01:31

Ferromagnetism

3.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
3.4K
Equivalent Capacitance01:19

Equivalent Capacitance

829
From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
829
Equivalent Capacitance01:19

Equivalent Capacitance

2.3K
Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
2.3K

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por
Same author

Paramagnetically driven superconducting re-entrance in Eu-doped infinite layer nickelates.

Nature communications·2026
Same author

Engineering Unequal Antipolar Displacement in Ferromagnetic Layered Oxide Heterostructures.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Polar discontinuities, emergent conductivity, and critical twist-angle-dependent behaviour at wafer-bonded ferroelectric interfaces.

Nature communications·2026
Same author

Electron Channeling Contrast Imaging of Ferroelastic Domains.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Curvature-Controlled Polarization in Adaptive Ferroelectric Membranes.

Small (Weinheim an der Bergstrasse, Germany)·2025
Same author

Surface-Tension-Induced Phase Transitions in Freestanding Ferroelectric Thin Films.

Nano letters·2025

Video Experimental Relacionado

Updated: Mar 19, 2026

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

9.3K

Capacidad negativa en las superredes ferroeléctricas de múltiples dominios

Pavlo Zubko1, Jacek C Wojdeł2, Marios Hadjimichael1

  • 1London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, 17-19 Gordon Street, London WC1H 0HA, UK.

Nature
|June 15, 2016
PubMed
Resumen

Las paredes de dominio en las superredes ferroeléctricas permiten la capacitancia negativa, un fenómeno crucial para la electrónica avanzada. Esta investigación demuestra cómo el movimiento de dominio mejora la permisividad negativa, superando las limitaciones en los transistores de efecto de campo.

Más Videos Relacionados

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.7K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K

Videos de Experimentos Relacionados

Last Updated: Mar 19, 2026

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

9.3K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.7K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K

Área de la Ciencia:

  • Ciencias de los materiales
  • Física de la materia condensada
  • Nanotecnología

Sus antecedentes:

  • Los materiales ferroeléctricos exhiben una polarización eléctrica espontánea vital para aplicaciones como dispositivos de memoria.
  • Las ferroeléctricas a nanoescala muestran comportamientos únicos distintos de los materiales a granel, que ofrecen potencial para nuevos dispositivos.
  • La polarización estable en ferroeléctricos delgados es un desafío, sin embargo, la desestabilización puede conducir a permisividad negativa y capacitancia negativa.

Objetivo del estudio:

  • Investigar la capacitancia negativa en las superredes ferroeléctricas de múltiples dominios.
  • Comprender el papel de la formación del dominio y el movimiento de la pared del dominio para lograr una capacitancia negativa.
  • Explorar el potencial de la capacitancia negativa para superar los límites de consumo de energía en los transistores de efecto de campo.

Principales métodos:

  • Estudio experimental de las superredes ferroeléctricas-dielectricas en un rango de temperaturas.
  • Desarrollo de un modelo fenomenológico para explicar la permisividad negativa.
  • Simulaciones atómicas basadas en principios para conocimientos microscópicos.

Principales resultados:

  • Capacidad negativa demostrada en superredes ferroeléctricas de múltiples dominios.
  • Se demostró que el movimiento de la pared de dominio es responsable de la permisividad negativa.
  • Encontró que el movimiento de dominio puede mejorar el rango de temperatura de la permisividad negativa.

Conclusiones:

  • El movimiento de la pared de dominio en superredes ferroeléctricas es un mecanismo viable para lograr una capacitancia negativa.
  • Las capas cercanas a la interfaz juegan un papel dominante en el fenómeno observado.
  • Este trabajo allana el camino para explotar la capacitancia negativa en futuros dispositivos electrónicos.