Jove
Visualize
Contáctanos
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas

Videos de Conceptos Relacionados

Van der Waals Interactions01:24

Van der Waals Interactions

72.9K
Atoms and molecules interact with each other through intermolecular forces. These electrostatic forces arise from attractive or repulsive interactions between particles with permanent, partial, or temporary charges. The intermolecular forces between neutral atoms and molecules are ion–dipole, dipole–dipole, and dispersion forces, collectively known as van der Waals forces.
72.9K
Van der Waals Equation01:10

Van der Waals Equation

6.8K
The ideal gas law is an approximation that works well at high temperatures and low pressures. The van der Waals equation of state (named after the Dutch physicist Johannes van der Waals, 1837−1923) improves it by considering two factors.
First, the attractive forces between molecules, which are stronger at higher densities and reduce the pressure, are considered by adding to the pressure a term equal to the square of the molar density multiplied by a positive coefficient a. Second, the volume...
6.8K
Fermi Level Dynamics01:12

Fermi Level Dynamics

919
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
919
Network Covalent Solids02:18

Network Covalent Solids

16.4K
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
16.4K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Semiconductors01:22

Semiconductors

1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por
Same author

Dielectric function of layered GaSe<sub>0.8</sub>Te<sub>0.2</sub> and emergent all van der Waals optical elements.

Scientific reports·2026
Same author

Addressing Critical Fungal Pathogens Under a One Health Perspective: Key Insights from the Portuguese Association of Medical Mycology.

Mycopathologia·2025
Same author

Milli-Tesla quantization enabled by tuneable Coulomb screening in large-angle twisted graphene.

Nature communications·2025
Same author

Diagonalization without Diagonalization: A Direct Optimization Approach for Solid-State Density Functional Theory.

Journal of chemical theory and computation·2025
Same author

From 2D kaolinite to 3D amorphous cement.

Scientific reports·2025
Same author

Viscous terahertz photoconductivity of hydrodynamic electrons in graphene.

Nature nanotechnology·2024

Video Experimental Relacionado

Updated: Mar 17, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

10.2K

Materiales 2D y heteroestructuras de Van der Waals

K S Novoselov1, A Mishchenko2, A Carvalho3

  • 1School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK. National Graphene Institute, University of Manchester, Manchester M13 9PL, UK. kostya@manchester.ac.uk phycastr@nus.edu.sg.

Science (New York, N.Y.)
|July 30, 2016
PubMed
Resumen

El rápido avance de los materiales bidimensionales (2D) permite una física 2D única y nuevos dispositivos de heterostructura. Esta revisión explora las propiedades de los cristales 2D y sus aplicaciones en tecnologías electrónicas y optoelectrónicas emergentes.

Más Videos Relacionados

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.3K
Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

8.4K

Videos de Experimentos Relacionados

Last Updated: Mar 17, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

10.2K
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.3K
Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

8.4K

Área de la Ciencia:

  • Física de la materia condensada
  • Ciencias de los materiales
  • Nanotecnología

Sus antecedentes:

  • El campo de los materiales bidimensionales (2D) y sus heteroestructuras está evolucionando rápidamente.
  • Estos materiales exhiben fenómenos físicos únicos que no se observan en las contrapartes a granel.
  • Los dispositivos de heterostructura emergentes aprovechan estas propiedades 2D para nuevas funcionalidades.

Objetivo del estudio:

  • Revisar las propiedades fundamentales de los nuevos cristales 2D.
  • Examinar la aplicación de estas propiedades en nuevos dispositivos de heterostructura.
  • Destacar el potencial de los materiales 2D en aplicaciones electrónicas y optoelectrónicas avanzadas.

Principales métodos:

  • Revisión de la literatura sobre los avances recientes en los materiales 2D.
  • Análisis de las propiedades físicas únicas de los sistemas 2D.
  • Examen de las arquitecturas de dispositivos que utilizan las heteroestructuras 2D.

Principales resultados:

  • Observación de la física 2D distinta, incluida la ausencia de orden de largo alcance y excitones 2D.
  • Desarrollo de nuevos dispositivos de heteroestructura como los transistores de túnel y los diodos de túnel de resonancia.
  • Demostración de las funcionalidades en heteroestructuras 2D no alcanzables con materiales convencionales.

Conclusiones:

  • Los materiales 2D ofrecen una plataforma para explorar la física fundamental y crear dispositivos de próxima generación.
  • Las propiedades únicas de los cristales 2D son cruciales para el rendimiento de las nuevas heteroestructuras.
  • La investigación continua en materiales 2D promete avances significativos en la electrónica y la fotónica.