Jove
Visualize
Contáctanos
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas

Videos de Conceptos Relacionados

Field Effect Transistor01:29

Field Effect Transistor

1.4K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.4K
P-N junction01:11

P-N junction

1.5K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.5K
Biasing of FET01:22

Biasing of FET

808
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
808
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

952
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
952
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.2K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.2K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

922
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
922

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por
Same author

A High-Purity Ethylene Epoxide Stream Produced Using a Supported Electrocatalyst.

Journal of the American Chemical Society·2026
Same author

Crystalline Dion-Jacobson 2D Layered Sn-Based Perovskites for Field-Effect Transistors.

Journal of the American Chemical Society·2026
Same author

Triple-junction solar cells with improved carrier and photon management.

Nature·2026
Same author

Ligand-Driven Tuning of Adsorption Energy in Nanocrystals for High-Performance H<sub>2</sub>O<sub>2</sub> Electrosynthesis.

Journal of the American Chemical Society·2026
Same author

Electrified release of pure CO<sub>2</sub> from postcapture liquid: A two-stage system lowers the total energy cost.

Proceedings of the National Academy of Sciences of the United States of America·2026
Same author

Small alkali cations direct CO electroreduction to hydrocarbons rather than oxygenates.

Nature chemistry·2026

Video Experimental Relacionado

Updated: Mar 7, 2026

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices
11:06

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Published on: July 8, 2016

11.0K

Transistores de efecto de campo fotovoltaico

Valerio Adinolfi1, Edward H Sargent1

  • 1Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.

Nature
|February 9, 2017
PubMed
Resumen
Este resumen es generado por máquina.

Los investigadores desarrollaron un nuevo fotodetector de silicio que utiliza puntos cuánticos para detectar la luz infrarroja. Este avance ofrece una alta ganancia y una respuesta rápida, mejorando significativamente las capacidades de detección de infrarrojos para dispositivos basados en silicio.

Más Videos Relacionados

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.5K
Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
14:37

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

10.0K

Videos de Experimentos Relacionados

Last Updated: Mar 7, 2026

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices
11:06

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Published on: July 8, 2016

11.0K
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.5K
Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
14:37

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

10.0K

Área de la Ciencia:

  • Ciencias de los materiales
  • Optoelectrónica y sus derivados
  • Física de los semiconductores

Sus antecedentes:

  • La electrónica de silicio está limitada a la detección de longitudes de onda de hasta 1.100 nm debido a su brecha de banda electrónica.
  • La detección infrarroja es crucial para aplicaciones como la visión nocturna, el monitoreo de la salud y las comunicaciones ópticas.
  • Extender las capacidades de detección del silicio al espectro infrarrojo es un objetivo tecnológico importante.

Objetivo del estudio:

  • Desarrollar un fotodetector basado en silicio sensible a la luz infrarroja.
  • Para superar las limitaciones de la brecha de banda intrínseca del silicio para la detección infrarroja.
  • Para crear un detector infrarrojo de alta ganancia y respuesta rápida utilizando una nueva combinación de materiales.

Principales métodos:

  • Fabricación de un transistor de efecto de campo fotovoltaico que utiliza silicio para el transporte de cargas.
  • Integración de puntos cuánticos coloidales como absorbentes de luz para permitir la sensibilidad al infrarrojo.
  • Caracterización de la ganancia, la respuesta temporal y la sintonizabilidad espectral del dispositivo.

Principales resultados:

  • El transistor de efecto de campo fotovoltaico desarrollado demuestra una alta ganancia (> 10 ^ 4 electrones por fotón a 1.500 nm) y una respuesta rápida (< 10 microsegundos).
  • La sensibilidad alcanzada a 1,500 nm es cinco órdenes de magnitud más alta que los detectores de silicio sensibilizados al infrarrojo anteriores.
  • La sensibilización de puntos cuánticos utiliza un proceso de solución a temperatura ambiente, evitando el crecimiento epitaxial a alta temperatura.

Conclusiones:

  • Los puntos cuánticos coloidales proporcionan una plataforma eficiente para la detección infrarroja basada en silicio.
  • Esta tecnología ofrece una alternativa rentable y de alto rendimiento a los semiconductores epitaxiales tradicionales para la detección infrarroja.
  • La respuesta espectral ajustable y el alto rendimiento posicionan este dispositivo para varias aplicaciones infrarrojas.