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Epitaxia por haz molecular de monosulfuro de molibdeno altamente cristalino en nitruro de boro hexagonal
Deyi Fu1,2, Xiaoxu Zhao2, Yu-Yang Zhang3,4
1SinBeRISE CREATE, National Research Foundation , CREATE Tower, 1 Create Way, Singapore 138602, Singapore.
Journal of the American Chemical Society
|June 22, 2017
Resumen
Los investigadores desarrollaron un método escalable para sintetizar películas de disulfuro de molibdeno (MoS2) altamente cristalinas en nitruro de boro hexagonal (h-BN). Este avance permite una producción uniforme y de gran superficie para la electrónica avanzada y la optoelectrónica.
Área de la Ciencia:
- Ciencias de los materiales
- Física de la materia condensada
- Nanotecnología
Sus antecedentes:
- El disulfuro de molibdeno atómicamente delgado (MoS2) es un semiconductor de brecha de banda directa prometedor para la electrónica y la optoelectrónica.
- La síntesis escalable de películas de MoS2 altamente cristalinas sigue siendo un desafío importante para las aplicaciones prácticas.
Objetivo del estudio:
- Para lograr un crecimiento epitaxial escalable de películas de MoS2 monocristalinas, uniformes y continuas.
- Investigar y controlar los mecanismos de nucleación y crecimiento de MoS2 en el nitruro de boro hexagonal (h-BN).
Principales métodos:
- Crecimiento epitaxial mediante epitaxia de haz molecular (MBE).
- Utilizando nitruro de boro hexagonal (h-BN) como sustrato para el crecimiento de MoS2.
- Utilizando altas temperaturas de crecimiento y flujo de precursores ultrabajos.
- Caracterización mediante microscopía de fuerza atómica (AFM) y microscopía electrónica.
Principales resultados:
- Crecimiento exitoso de películas monocristalinas de MoS2 continuas, uniformes y altamente cristalinas en h-BN.
- Identificación de dos tipos principales de granos de nucleación (dominios de 0° y 60°) en el MoS2.
- La supresión de dominios antialineados de 60° a través de condiciones de crecimiento optimizadas (alta temperatura, bajo flujo).
- Demostración de crecimiento de película de MoS2 a gran escala (oblea de 2 pulgadas) con buena uniformidad espacial.
Conclusiones:
- El estudio presenta un avance significativo en la síntesis escalable de películas MoS2 de alta calidad.
- Las condiciones de crecimiento MBE optimizadas permiten la formación de granos de MoS2 perfectamente alineados, lo que lleva a películas altamente cristalinas.
- Este método allana el camino para la integración a gran escala de MoS2 en dispositivos electrónicos y optoelectrónicos.
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