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Formación de patrones en los semiconductores

V V Bel'kov1, J Hirschinger1, V Novák2

  • 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany.

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|April 19, 2018
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Resumen
Este resumen es generado por máquina.

Las propiedades no lineales de los semiconductores conducen a transiciones de fase de no equilibrio. A bajas temperaturas, la ionización por impacto provoca un aumento abrupto de la densidad del portador libre, formando patrones de corriente filamentaria.

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Área de la Ciencia:

  • Física de los semiconductores
  • Física de la materia condensada

Sus antecedentes:

  • La dinámica y el transporte del portador no lineal son cruciales en los semiconductores.
  • La generación autocatalítica de portadores libres a través de la ionización por impacto es una no linealidad clave a baja temperatura.

Objetivo del estudio:

  • Investigar las transiciones de fase de no equilibrio en semiconductores impulsados por procesos no lineales.
  • Comprender el papel de la ionización de impacto en la generación y el transporte de portadores.

Principales métodos:

  • Análisis de los procesos de generación y recombinación no lineales.
  • Estudio de los mecanismos de transporte de carga no lineal.
  • Investigación de los efectos del campo eléctrico en la densidad de la portadora.

Principales resultados:

  • Las no linealidades pueden inducir transiciones de fase de no equilibrio en semiconductores.
  • La ionización de impacto a bajas temperaturas conduce a un aumento abrupto de la densidad del portador libre en un campo eléctrico crítico.
  • Los campos eléctricos estáticos dan lugar a patrones de corriente filamentaria complejos localizados en los contactos.

Conclusiones:

  • El comportamiento del semiconductor no lineal puede conducir a transiciones de fase únicas.
  • La ionización por impacto es un mecanismo fundamental para la generación de portadores y el transporte no lineal.
  • Los patrones de corriente filamentaria son un resultado característico de estas no linealidades en los campos eléctricos.