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Magnetorresistencia de túnel gigante en las heteroestructuras de filtro de espín de van der Waals
Tiancheng Song1, Xinghan Cai1, Matisse Wei-Yuan Tu2
1Department of Physics, University of Washington, Seattle, WA 98195, USA.
Science (New York, N.Y.)
|May 5, 2018
Resumen
Los investigadores desarrollaron nuevas uniones de túnel magnético utilizando triioduro de cromo atómicamente delgado (CrI3) como filtro de espín. Este avance logró una magnetorresistencia récord del 19,000%, allanando el camino para el almacenamiento de datos magnéticos ultrafinos.
Área de la Ciencia:
- Ciencias de los materiales
- Física de la materia condensada
- Nanotecnología
Sus antecedentes:
- Los dispositivos magnéticos multicapa son cruciales para el almacenamiento y la detección de datos.
- Las tecnologías existentes se enfrentan a limitaciones de miniaturización y rendimiento.
Objetivo del estudio:
- Investigar nuevas uniones de túneles magnéticos (MTJ) utilizando las heteroestructuras de van der Waals (vdW).
- Explorar el potencial del triioduro de cromo atómicamente delgado (CrI3) como barrera de túnel de filtro de espín.
Principales métodos:
- Fabricación de uniones de túnel magnético de filtro múltiple (sf-MTJ) con barreras CrI3 y contactos de grafeno.
- Medición de la magnetorresistencia de túnel (TMR) en diferentes espesores de las capas CrI3.
- Caracterización mediante dicroísmo magnético circular (MCD) para el ordenamiento magnético de la sonda.
Principales resultados:
- Demostró una magnetorresistencia de túnel significativamente mejorada con el aumento del grosor de CrI3.
- Logró una magnetorresistencia récord del 19,000% en MTJs sf de cuatro capas a bajas temperaturas.
- Se observa un ordenamiento antiferromagnético intrínseco capa por capa en CrI3 atómicamente delgado.
Conclusiones:
- El CrI3 atómicamente delgado funciona como una barrera de filtro de espín altamente efectiva en las heteroestructuras vdW.
- Esta investigación permite el almacenamiento de información magnética a escala atómica.
- CrI3 se identifica como un material prometedor para dispositivos espintrónicos avanzados.
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