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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
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Comentario sobre las películas epitaxiales de recubrimiento espinoso
1College of Physics, State Key Laboratory of Bio-Fibers and Eco-Textiles, Qingdao University, Qingdao, Shandong 266071, China. cjlu@qdu.edu.cn.
Science (New York, N.Y.)
|September 14, 2019
Resumen
Este estudio desafía la afirmación de películas epitaxiales inorgánicas creadas por el recubrimiento de espín. El análisis de las figuras de los polos indica un bajo porcentaje de granos epitaxiales, lo que sugiere que las películas no son realmente epitaxiales.
Área de la Ciencia:
- Ciencias de los materiales
- La cristalografía
Sus antecedentes:
- El recubrimiento por rotación es un método para depositar películas delgadas.
- El crecimiento epitaxial requiere una orientación cristalográfica específica entre la película y el sustrato.
Objetivo del estudio:
- Reevaluar la alegación de películas epitaxiales inorgánicas producidas por recubrimiento de espín.
- Para determinar el grado real de epitaxia en las películas depositadas por Kelso et al.
Principales métodos:
- Se utilizó la difracción de rayos X (XRD) para analizar la estructura cristalográfica.
- Se empleó el análisis de la figura de polo para cuantificar la orientación de los granos dentro de las películas.
Principales resultados:
- Las películas contenían solo del 4,1% al 25,5% de granos epitaxiales.
- El porcentaje calculado de granos epitaxiales indica una falta de verdadero crecimiento epitaxial.
Conclusiones:
- Las películas inorgánicas depositadas por el recubrimiento de espín, según lo informado por Kelso et al., no pueden considerarse epitaxiales.
- Los hallazgos sugieren limitaciones del recubrimiento de espín para lograr un crecimiento epitaxial de alta calidad en estos materiales.
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