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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Diodos moleculares de conmutación basados en fullereno controlados por campos eléctricos externos orientados

Adam Jaroš1,2, Esmaeil Farajpour Bonab3,4, Michal Straka1

  • 1Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences , Flemingovo nám. 2 , CZ-16610 Prague , Czech Republic.

Journal of the American Chemical Society
|November 21, 2019
PubMed
Resumen

Desarrollamos nuevos diodos de conmutación de fullereno (FSD) utilizando moléculas polares encapsuladas para el almacenamiento de datos. Los campos eléctricos aplicados controlan la orientación molecular, lo que permite la conmutación controlada por voltaje y las operaciones de lectura / escritura de datos.

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Área de la Ciencia:

  • La electrónica molecular
  • Nanotecnología
  • Ciencias de los materiales

Sus antecedentes:

  • Los diodos moleculares son cruciales para el almacenamiento y procesamiento avanzado de datos.
  • Los fullerenos endohedrales ofrecen una plataforma única para la fabricación de dispositivos moleculares.

Objetivo del estudio:

  • Proponer e investigar diodos de conmutación de fullereno (FSD) basados en fullerenos endodérmicos que encapsulan moléculas polares (MX@C70).
  • Demostrar las capacidades de conmutación y almacenamiento de datos controlados por voltaje de estos diodos moleculares.

Principales métodos:

  • Multiescala en el modelado de silicio.
  • La teoría funcional de la densidad combinada con los cálculos de la función de Green de no equilibrio (DFT-NEGF).
  • Simulaciones de sistemas MX@C70 con electrodos de dos y cuatro terminales bajo campos eléctricos externos.

Principales resultados:

  • Los campos eléctricos externos pueden controlar la orientación de las moléculas MX encapsuladas dentro de las jaulas C70.
  • La conductividad de los sistemas MX@C70 depende de la orientación MX en relación con los electrodos.
  • Comutación inducida por voltaje entre estados conductores, análogo a un memristor molecular.

Conclusiones:

  • Los sistemas MX@C70 funcionan como diodos moleculares de conmutación sensibles al voltaje.
  • La orientación de las moléculas encapsuladas se puede escribir y leer utilizando voltajes aplicados.
  • Estos diodos conmutadores de fullereno son prometedores para aplicaciones de almacenamiento y procesamiento de datos moleculares.