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Peinados de frecuencia inducidos por la turbulencia de fase

Marco Piccardo1,2, Benedikt Schwarz3,4, Dmitry Kazakov3

  • 1Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA. piccardo@g.harvard.edu.

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|June 20, 2020
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Resumen
Este resumen es generado por máquina.

Los láseres de anillo de semiconductores pueden generar peines de frecuencia óptica a bajos niveles de bombeo, un fenómeno que anteriormente se pensaba que requería condiciones extremas. Este avance se logra a través de la turbulencia de fase, una inestabilidad impulsada por la recuperación de ganancia ultrarrápida y la mejora del ancho de línea.

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Área de la Ciencia:

  • La fotónica
  • Óptica no lineal
  • Física del láser

Sus antecedentes:

  • La inestabilidad de la onda conduce a la turbulencia en la hidrodinámica y conduce a los peines de frecuencia óptica en la fotónica.
  • Los peines de frecuencia óptica son formas de onda de luz periódicas generadas a través de interacciones no lineales y mecanismos de bloqueo coherentes.
  • En los peines de microrresonador, la inestabilidad surge de la dispersión del resonador y la no linealidad de Kerr, a diferencia de los láseres de anillo donde generalmente requiere un bombeo extremo.

Objetivo del estudio:

  • Para demostrar que los láseres de anillo de semiconductores pueden lograr regímenes de peinado de frecuencia a bajos niveles de bombeo.
  • Investigar el papel de la turbulencia de fase en la habilitación de los peines de frecuencia en los láseres de anillo de semiconductores.
  • Para conectar el comportamiento de los láseres de anillo de semiconductores con peines de frecuencia de microrresonador.

Principales métodos:

  • Utilizando láseres de anillo de semiconductores con recuperación de ganancia ultrarrápida.
  • Investigando la turbulencia de fase como el mecanismo de inestabilidad subyacente.
  • Aplicando el formalismo de Ginzburg-Landau para formular las condiciones de inestabilidad.

Principales resultados:

  • Los láseres de anillo de semiconductores exhiben regímenes de peine de frecuencia a bajos niveles de bombeo, contrariamente a las suposiciones anteriores.
  • La turbulencia de fase, que surge del acoplamiento fase-amplitud a través de la mejora del ancho de línea, impulsa la inestabilidad.
  • Las estructuras localizadas observadas comparten propiedades con los solitones de Kerr disipables.

Conclusiones:

  • Los láseres de anillo de semiconductores pueden generar peines de frecuencia óptica en condiciones no extremas a través de la turbulencia de fase.
  • Este trabajo establece un vínculo entre los láseres de anillo de semiconductores y los peines de frecuencia de microrresonador.
  • Los hallazgos abren nuevas vías para explorar la generación de peine de frecuencia en dispositivos semiconductores.