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La localización del portador de carga en los nanocristales de perovskita dopados mejora la recombinación radiativa
Sascha Feldmann1, Mahesh K Gangishetty2,3, Ivona Bravić1
1Cavendish Laboratory, University of Cambridge, Cambridge CB30HE, U.K.
Journal of the American Chemical Society
|May 17, 2021
Resumen
El dopaje de manganeso mejora la emisión de luz en los nanocristales de perovskita halogenada al aumentar las tasas de recombinación. Esta estrategia fundamental aumenta la eficiencia de la luminiscencia para las aplicaciones de iluminación.
Área de la Ciencia:
- Ciencias de los materiales
- Física del estado sólido
- Nanotecnología
Sus antecedentes:
- Los nanocristales de perovskita halogenada son prometedores para una iluminación eficiente.
- El control de la eficiencia de luminiscencia en estos materiales es un desafío.
Objetivo del estudio:
- Investigar la dinámica de la recombinación por excitación en los nanocristales de perovskita CsPb ((Cl,Br) 3) dopados con manganeso.
- Comprender el mecanismo detrás de la luminiscencia mejorada tras el dopaje.
Principales métodos:
- Espectroscopia óptica transitoria para el estudio de la dinámica de la recombinación.
- Cálculos iniciales para apoyar los hallazgos experimentales.
Principales resultados:
- El dopaje de manganeso aumenta significativamente la tasa de recombinación radiativa excitónica intrínseca.
- Las tasas mejoradas se atribuyen a una mayor localización del portador de carga inducida por los dopantes de Mn.
- Se observó una mayor superposición de las funciones de onda de agujero electrónico y la fuerza del oscilador local.
Conclusiones:
- La ruptura de la periodicidad del enrejado por dopantes de Mn mejora la eficiencia de la luminiscencia.
- Esto proporciona una estrategia fundamental para mejorar las aplicaciones de emisión de luz de nanocristales de perovskita.
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