Jove
Visualize
Contáctanos
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas

Videos de Conceptos Relacionados

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

518
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
518
Switching of BJT01:22

Switching of BJT

521
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
521
Schottky Barrier Diode01:27

Schottky Barrier Diode

544
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
544
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

361
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
361
Three-Phase Circuits01:22

Three-Phase Circuits

537
AC power distribution systems have three categories: single-phase, two-phase, and three-phase systems. The single-phase circuit, common in residential settings, typically employs a two-wire system connecting a single AC source to various loads. These circuits support standard household appliances operating at 120 volts (V) and 240 V, such as lamps, televisions, and microwaves. The first generators, Niagara Falls hydro plant installed in 1895, were two-phase and designed by Nikola Tesla. The...
537
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

558
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
558

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por
Same author

A sub-10-millisecond neural dynamical system based on phase-change memristors.

Science (New York, N.Y.)·2026
Same author

Alternating atomic-dipole layers and switching dynamics in Al<sub>1-x</sub>Sc<sub>x</sub>N ferroelectrics.

Science (New York, N.Y.)·2026
Same author

Ginkgo biloba extract as a retinal protective agent: a systematic review of preclinical experiments.

Molecular biology reports·2026
Same author

Large language models for systematic reviews were reported to perform well but rarely with verifiable safeguards: a cross-sectional study.

Journal of clinical epidemiology·2026
Same author

Development and implementation of an ecological education model for evidence-based practice competency in undergraduate nursing students: A mixed-methods feasibility study.

International journal of nursing sciences·2026
Same author

Efficient and accurate neural-field reconstruction using resistive memory.

Nature·2026
Same journal

Erratum for the Research Article "Detecting supramolecular organic nanoparticles during heat wave".

Science (New York, N.Y.)·2026
Same journal

Local signals, systemic decline.

Science (New York, N.Y.)·2026
Same journal

The mechanics of liver regeneration.

Science (New York, N.Y.)·2026
Same journal

Computing in a memory with physics.

Science (New York, N.Y.)·2026
Same journal

Retraction.

Science (New York, N.Y.)·2026
Same journal

Making time.

Science (New York, N.Y.)·2026
Ver todos los artículos relacionados

Video Experimental Relacionado

Updated: Oct 10, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

Interruptor eléctrico elemental que permite el funcionamiento sin segregación de fases

Jiabin Shen1,2, Shujing Jia1,2, Nannan Shi3

  • 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China.

Science (New York, N.Y.)
|December 9, 2021
PubMed
Resumen
Este resumen es generado por máquina.

Los investigadores desarrollaron un nuevo interruptor volátil de un solo elemento de telurio (Te) para chips de memoria avanzados. Este interruptor ofrece alta densidad de corriente y velocidades de conmutación rápidas, simplificando los materiales para futuros dispositivos de memoria no volátil de alta densidad.

Más Videos Relacionados

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.7K
Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.4K

Videos de Experimentos Relacionados

Last Updated: Oct 10, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.7K
Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.4K

Área de la Ciencia:

  • Ciencias de los materiales
  • Ingeniería eléctrica
  • Física del estado sólido

Sus antecedentes:

  • La comercialización de la memoria de cambio de fase no volátil se enfrenta a desafíos de escala de densidad por debajo de 10 nm.
  • Los interruptores selectores de corriente, a menudo interruptores de umbral ovónicos (OTS), se basan en composiciones complejas de calogenuro.
  • La complejidad química en los OTS dificulta el desarrollo de materiales homogéneos para la memoria avanzada.

Objetivo del estudio:

  • Introducir un interruptor volátil simplificado de un solo elemento para aplicaciones de memoria de alta densidad.
  • Para superar las limitaciones de complejidad del material de los actuales interruptores de umbral ovónico amorfos (OTS).
  • Para demostrar un nuevo mecanismo de conmutación para dispositivos de memoria de próxima generación.

Principales métodos:

  • Fabricación y caracterización de un interruptor volátil de un solo elemento de telurio (Te).
  • Mediciones eléctricas para determinar la densidad de corriente, la relación encendido/apagado y la velocidad de conmutación.
  • Análisis del mecanismo de conmutación que implica la barrera de Schottky y la transición cristal-líquido.

Principales resultados:

  • Se logra una gran densidad de corriente de accionamiento (≥11 MA/cm2) con un interruptor de Te de un solo elemento.
  • Demostró una alta relación de encendido/apagado de aproximadamente 103 y una velocidad de conmutación más rápida de 20 ns.
  • Se identificó una barrera de Schottky de ~ 0,95 eV en la interfaz del electrodo Te que contribuye a una baja corriente OFF.
  • Se observó una transición de fusión de cristal líquido inducida por pulso de voltaje en Te puro que permite una alta corriente ON.

Conclusiones:

  • Un interruptor volátil de un solo elemento de telurio (Te) ofrece una alternativa prometedora a los interruptores complejos de calogenuro.
  • El interruptor Te exhibe un excelente rendimiento eléctrico, incluida una alta densidad de corriente y una conmutación rápida.
  • Este descubrimiento simplifica los requisitos de material y puede permitir la integración de chips de memoria más densos.