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Fósforo violeta bidimensional: un semiconductor de tipo p para la (opto) electrónica

Antonio Gaetano Ricciardulli1, Ye Wang1, Sheng Yang2

  • 1University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, 67000 Strasbourg, France.

Journal of the American Chemical Society
|February 18, 2022
PubMed
Resumen
Este resumen es generado por máquina.

El fósforo violeta (VP) se exfolia en escamas de pocas capas, revelando propiedades semiconductoras prometedoras de tipo p. Este descubrimiento ofrece un nuevo material para dispositivos optoelectrónicos avanzados y semiconductores de óxido metálico complementarios (CMOS).

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Área de la Ciencia:

  • Ciencias de los materiales
  • Física de la materia condensada
  • Nanotecnología

Sus antecedentes:

  • Los materiales bidimensionales (2D) son cruciales para la electrónica de próxima generación.
  • La falta de semiconductores 2D de tipo p limita la ingeniería de dispositivos, especialmente para aplicaciones CMOS.
  • Los nuevos materiales 2D de tipo p son esenciales para avanzar más allá de las limitaciones actuales de la Ley de Moore.

Objetivo del estudio:

  • Para exfoliar el fósforo violeta (VP) en materiales 2D de pocas capas.
  • Para investigar las propiedades optoelectrónicas del VP exfoliado.
  • Evaluar el potencial de VP para los dispositivos electrónicos de próxima generación.

Principales métodos:

  • Se recomienda la utilización de la técnica de sonorización para la exfoliación en fase líquida de cristales de fósforo violeta.
  • Fabricación y caracterización de transistores de efecto de campo (FET) utilizando películas delgadas de VP.
  • Fabricación y caracterización de fotodetectores y conjuntos de inversores CMOS con VP.

Principales resultados:

  • El VP exfoliado exhibe un transporte de tipo p con una alta relación de encendido/apagado (10^4) y movilidad de orificios (2,25 cm^2 V^-1 s^-1).
  • Los fotodetectores basados en VP muestran una buena fotorresponsividad (10 mA W^-1) y tiempos de respuesta rápidos (0,16 s).
  • La VP integrada en los inversores CMOS muestra una ganancia de voltaje significativa (∼17).

Conclusiones:

  • El fósforo violeta es un semiconductor 2D de tipo p prometedor y versátil.
  • La producción escalable y el excelente rendimiento optoelectrónico hacen que VP sea adecuado para la (opto) electrónica avanzada.
  • VP ofrece una nueva vía para el desarrollo de dispositivos electrónicos y fotónicos más que Moore.