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Un amplificador fotónico de circuito integrado dopado con erbio
Yang Liu1,2, Zheru Qiu1,2, Xinru Ji1,2
1Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Science (New York, N.Y.)
|June 16, 2022
Resumen
Los investigadores desarrollaron un amplificador de erbio de circuito fotónico integrado de nitruro de silicio con una potencia de salida de 145 milivatios y una ganancia de 30 decibelios. Este avance permite dispositivos ópticos miniaturizados de alto rendimiento para las comunicaciones y la tecnología láser.
Área de la Ciencia:
- La fotónica
- Ciencias de los materiales
- Comunicaciones ópticas
Sus antecedentes:
- Los amplificadores de fibra dopados con erbio son cruciales para las comunicaciones ópticas y los láseres.
- Los circuitos fotónicos integrados (PIC) actuales basados en erbio carecen de potencia de salida suficiente para aplicaciones prácticas.
Objetivo del estudio:
- Para demostrar un amplificador PIC de alta potencia dopado con erbio.
- Para superar las limitaciones de potencia de los iones de erbio en los PIC para aplicaciones avanzadas.
Principales métodos:
- Se utilizó la técnica de implantación de iones en PIC de nitruro de silicio (Si3N4) de pérdida ultrabaja.
- Iones de erbio integrados en la plataforma fotónica Si3N4.
Principales resultados:
- Se logró una potencia de salida de 145 milivatios y una ganancia de señal de más de 30 decibelios.
- Se han superado los amplificadores de semiconductores III-V de última generación.
- Aumento de la potencia de salida del microcomb solitón por 100 veces.
Conclusiones:
- El amplificador de erbio Si3N4 PIC desarrollado compite con los amplificadores de fibra comerciales en rendimiento.
- Permite la miniaturización de dispositivos basados en fibra como los láseres de femtosegundo.
- Cumple los requisitos de potencia para la generación de microondas fotónicas de bajo ruido y las comunicaciones ópticas WDM.
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