Acoplamiento optoelectrónico mejorado para células solares en tándem de perovskita y silicio

Erkan Aydin1, Esma Ugur2, Bumin K Yildirim3

  • 1Material Science and Engineering Program (MSE), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia. erkan.aydin@kaust.edu.sa.

Nature
|September 28, 2023
PubMed
Resumen

Los investigadores desarrollaron un nuevo método para las células solares en tándem de perovskita / silicio utilizando óxido de indio zinc amorfo ultradelgado (IZO) como capa de interconexión. Este enfoque mejora la homogeneidad de la superficie, lo que lleva a una eficiencia de conversión de energía certificada del 32,5% y reduce el uso de indio en un 80%.

Videos de Conceptos Relacionados

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
559