Jove
Visualize
Contáctanos
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas

Videos de Conceptos Relacionados

MOS Capacitor01:25

MOS Capacitor

680
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
680
Characteristics of MOSFET01:17

Characteristics of MOSFET

330
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
330
MOSFET01:16

MOSFET

411
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
411
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

270
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
270
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

3.9K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
3.9K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.1K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.1K

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por
Same author

Extraction techniques, structural features, structure-activity relationships and mechanisms of Imperata cylindrica polysaccharides against hyperuricemic nephropathy: A review.

Carbohydrate research·2026
Same author

A membrane-anchored nanoscale zero-valent iron bio-interface enhances interspecies electron transfer in anaerobic membrane bioreactors.

Bioresource technology·2026
Same author

Regulating hydrogen-bond network via competitive coordination for cryogenic aqueous Zn-ion batteries.

Journal of colloid and interface science·2026
Same author

Effect of the Polymerization Degree of Cardanol Polyoxyethylene Ether on the Oil-Water Interface: Experimental and Molecular Dynamics Simulation Study.

The journal of physical chemistry. B·2026
Same author

A comprehensive review of Stropharia rugosoannulata polysaccharides: Extraction methods, isolation and purification, structural features, chemical modification, biological activities, and application prospects.

Carbohydrate research·2026
Same author

A cross-sectional survey on pharmacists' protection against hazardous drugs in China based on USP <800>, NIOSH and ISOPP standards: Comparative analysis and improvement suggestions.

Journal of oncology pharmacy practice : official publication of the International Society of Oncology Pharmacy Practitioners·2026

Video Experimental Relacionado

Updated: May 29, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

Cu 1T' MoS estabilizado por intercalación con comportamiento aislante eléctrico

Huiyu Nong1, Junyang Tan1, Yujie Sun1

  • 1Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China.

Journal of the American Chemical Society
|February 3, 2025
PubMed
Resumen

Los investigadores han logrado intercalar el cobre en 1T

Más Videos Relacionados

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.2K
Tools for Surface Treatment of Silicon Planar Intracortical Microelectrodes
06:39

Tools for Surface Treatment of Silicon Planar Intracortical Microelectrodes

Published on: June 8, 2022

2.4K

Videos de Experimentos Relacionados

Last Updated: May 29, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.2K
Tools for Surface Treatment of Silicon Planar Intracortical Microelectrodes
06:39

Tools for Surface Treatment of Silicon Planar Intracortical Microelectrodes

Published on: June 8, 2022

2.4K

Área de la Ciencia:

  • Ciencias de los materiales
  • Física de la materia condensada
  • Nanotecnología

Sus antecedentes:

  • Los dicalcogenuros de metales de transición bidimensionales (2D) ofrecen propiedades sintonizables.
  • Los TMDC de fase 1T' de baja simetría son prometedores para fenómenos nuevos, pero a menudo sufren de mala calidad y estabilidad.
  • Comprender las relaciones estructura-propiedad en los TMDC intercalados es crucial para las aplicaciones.

Objetivo del estudio:

  • Para sintetizar 1T' MoS2 de alta calidad y térmicamente estable.
  • Para aclarar la distribución y disposición precisas de los intercaladores de cobre (Cu).
  • Investigar las propiedades de transporte del material intercalado Cu resultante.

Principales métodos:

  • Intercalación del cobre (Cu) en 1T' MoS2.
  • Análisis cristalográfico para determinar las posiciones del intercalador.
  • Mediciones de transporte eléctrico dependientes de la temperatura.

Principales resultados:

  • Se consigue una alta cristalinidad y estabilidad térmica (hasta ~300 °C) para 1T' MoS2 intercalado con Cu.
  • Intercaladores de Cu identificados que ocupan intersticios tetraédricos alineados con sitios de Mo.
  • Se ha observado un transporte de saltos aislantes con un coeficiente de resistencia negativo significativo (-4 a -2%·K-1).

Conclusiones:

  • Se ha demostrado un método para mejorar la calidad y la estabilidad de los TMDC de fase 1T' mediante la intercalación.
  • Estableció una comprensión detallada de la intercalación de Cu en 1T' MoS2.
  • Destacó el potencial para el diseño de estructuras y la modulación de propiedades en materiales en capas a través de la intercalación artificial.