Video Experimental Relacionado

Updated: Sep 10, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Recocido selectivo con láser DUV de femtosegundos para la modulación de las propiedades eléctricas en el inversor

Joo Hyun Jeong¹, Won Woo Lee¹, Sang Jik Kwon²

¹Department of Semiconductor Engineering, Gachon University, Seongnam City 13120, Republic of Korea.

Nanomaterials (Basel, Switzerland)

|August 27, 2025

Resumen

Los transistores de película delgada de oxinitruro de zinc (ZnON) dopados con nitrógeno ofrecen una alternativa al óxido de gallio-zinco de indio (IGZO). El recocido láser ultravioleta profundo permite una modulación rápida de la tensión de umbral para dispositivos electrónicos confiables.

Área de la Ciencia:

Ciencias de los materiales
Física de los semiconductores
Ingeniería de dispositivos

Sus antecedentes:

El óxido de gallio zinc amorfo (a-IGZO) es un semiconductor de óxido prevalente, pero se enfrenta a limitaciones como altas temperaturas de procesamiento y costo de indio.
El oxinitruro de zinc dopado con nitrógeno (ZnON) presenta una alternativa prometedora, procesado a temperatura ambiente y que ofrece reducción de las vacantes de oxígeno para mejorar el rendimiento y la estabilidad.

Objetivo del estudio:

Investigar la aplicación del recocido láser selectivo de femtosegundo ultravioleta profunda (DUV fs) para la modulación del voltaje de umbral (Vth) en los transistores de película delgada ZnON (TFT).
Evaluar el rendimiento de los TFT de ZnON modulados en Vth y demostrar su idoneidad para circuitos electrónicos.

Principales métodos:

El recocido selectivo por láser DUV fs aplicado a la región del canal de los TFT de ZnON.
Caracterización de las propiedades eléctricas, incluida la modulación de la tensión de umbral, de los TFT de ZnON prístinos y recocidos con láser.
Fabricación y ensayo de un inversor NMOS utilizando TFT de ZnON modulado en Vth.

Principales resultados:

Modulación Vth rápida alcanzada en microsegundos mediante recocido láser DUV fs, sin procesamiento al vacío.
Los TFT de ZnON exhibieron una mayor movilidad y estabilidad de efecto de campo en comparación con IGZO.
Los inversores NMOS fabricados demostraron un rendimiento confiable, validando el potencial del ZnON recocido con láser.

Conclusiones:

El recocido láser DUV fs es una técnica eficaz y rápida para modular las características eléctricas de los TFT de ZnON.
ZnON ofrece una alternativa viable, rentable y estable a a-IGZO para aplicaciones de semiconductores.
El recocido láser es muy prometedor para la fabricación de diversos circuitos lógicos y dispositivos electrónicos.

Palabras clave:

Invertidor NMOS Proceso de recocido con láser de femtosegundo ultravioleta profunda (DUV fs)Transistor de película delgada (TFT)Oxitruro de zinc (ZnON) y sus derivados

Más Videos Relacionados

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Videos de Conceptos Relacionados

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...