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Updated: Sep 9, 2025

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Resistencia diferencial negativa en sistemas memrísticos: evolución histórica, mecanismos y aplicaciones

Hongyi Lu1, Shiyu Xie1, Weijian Zhang1

  • 1College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China. qbx20230089@yjs.fjnu.edu.cn.

Nanoscale
|August 29, 2025
PubMed
Resumen

Los memristores de óxido de niobio exhiben una resistencia diferencial negativa (NDR) y una dinámica de picos únicos, ideales para la computación neuromórfica energéticamente eficiente. Esta investigación examina el NDR en memristores y sus aplicaciones futuras.

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