Jove
Visualize
Contáctanos
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas

Videos de Conceptos Relacionados

Ferromagnetism01:31

Ferromagnetism

2.5K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.5K
Non-ohmic Devices00:51

Non-ohmic Devices

1.2K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.2K
Fatigue01:21

Fatigue

237
Fatigue occurs when materials rupture under repeated or fluctuating loads, even at stress levels far below their static breaking strength. It typically results in brittle failure, even for ductile materials. It is a critical consideration in designing machines and structural components subjected to repetitive or varying loads. The nature of these loadings can range from fluctuating loads like unbalanced pump impellers causing vibrations to repeatedly bending a thin steel rod wire back and forth...
237
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.4K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.4K
MOS Capacitor01:25

MOS Capacitor

958
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
958
Theory of Metallic Conduction01:17

Theory of Metallic Conduction

1.4K
The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
1.4K

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por
Same author

Direct Observation of Conduction Mechanism in Te-Based Selector-Only Memory via Low-Frequency Noise Characterization.

Nano letters·2026
Same author

A ferroelectric-ionic-trapping transistor for low power and secure neuromorphic computing.

Nature communications·2026
Same author

Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing.

Nature communications·2026
Same author

A novel observation of negative differential resistance in a standard CMOS transistor and its application to a compact frequency doubler.

Microsystems & nanoengineering·2026
Same author

Thermally activated excess noise by subgap density-of-states in Si-doped ZnSnO thin-film transistor-type gas sensor.

Microsystems & nanoengineering·2026
Same author

Sub-mV tunable photonic p-bits for probabilistic computing.

Science advances·2026

Video Experimental Relacionado

Updated: Sep 9, 2025

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

8.8K

Correlación física entre la estocasticidad y el daño inducido por el proceso en los dispositivos de memoria

Ryun-Han Koo1, Seungwhan Kim1, Jiseong Im1

  • 1Department of Electrical and Computer Engineering and Inter- University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Korea.

Nano convergence
|August 29, 2025
PubMed
Resumen

La potencia de plasma de pulverización afecta el rendimiento de la unión del túnel ferroeléctrico (FTJ) al alterar la densidad de la trampa. La optimización de las condiciones de plasma minimiza el ruido, mejora la memoria y los dispositivos neuromórficos al tiempo que garantiza la confiabilidad.

Palabras clave:
Cruce de túneles ferroviarios eléctricosRuido de baja frecuencia (LFN)Daño inducido por plasmaEstocasticidadFormación de trampa

Más Videos Relacionados

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Full-field Strain Measurements for Microstructurally Small Fatigue Crack Propagation Using Digital Image Correlation Method
07:37

Full-field Strain Measurements for Microstructurally Small Fatigue Crack Propagation Using Digital Image Correlation Method

Published on: January 16, 2019

9.8K

Videos de Experimentos Relacionados

Last Updated: Sep 9, 2025

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

8.8K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Full-field Strain Measurements for Microstructurally Small Fatigue Crack Propagation Using Digital Image Correlation Method
07:37

Full-field Strain Measurements for Microstructurally Small Fatigue Crack Propagation Using Digital Image Correlation Method

Published on: January 16, 2019

9.8K

Área de la Ciencia:

  • Ciencias de los materiales
  • Física del estado sólido
  • Ingeniería de dispositivos

Sus antecedentes:

  • Las uniones de túneles ferroeléctricos (FTJ) basadas en HfZrO2 (HZO) son prometedoras para aplicaciones de memoria y neuromórficas.
  • Los procesos de pulverización de plasma pueden introducir defectos que influyen en las características eléctricas del dispositivo.

Objetivo del estudio:

  • Investigar cómo los daños inducidos por la pulverización plasmática afectan las propiedades estocásticas de los FTJ basados en HZO.
  • Optimizar el rendimiento del dispositivo para aplicaciones de memoria y neuromórficas mediante el control de defectos inducidos por plasma.

Principales métodos:

  • Se utilizó la espectroscopia de ruido de baja frecuencia (LFN) para analizar las características estocásticas.
  • Se realizaron mediciones eléctricas dependientes de la temperatura.
  • La potencia de pulverización de plasma fue variada sistemáticamente durante la deposición del electrodo superior.

Principales resultados:

  • El aumento de la potencia de pulverización de plasma condujo a una mayor densidad de trampa en la capa HZO.
  • La mayor densidad de trampa promovió la conducción de Poole-Frenkel y aumentó la magnitud del ruido de corriente.
  • Se observó una mayor densidad de corriente y la relación de electrorresistencia del túnel ferroeléctrico (TER), pero con mayores fluctuaciones estocásticas.

Conclusiones:

  • Las condiciones del proceso de plasma influyen de manera crítica en la densidad de la trampa, el LFN y el rendimiento del dispositivo en los FTJ.
  • La optimización de los parámetros de pulverización puede minimizar el ruido estocástico al tiempo que mejora el rendimiento eléctrico.
  • Este estudio proporciona directrices para el desarrollo de sistemas de memoria y neuromórficos fiables basados en ferroeléctricos de próxima generación.