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Correlación física entre la estocasticidad y el daño inducido por el proceso en los dispositivos de memoria

Ryun-Han Koo¹, Seungwhan Kim¹, Jiseong Im¹

¹Department of Electrical and Computer Engineering and Inter- University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Korea.

Nano convergence

|August 29, 2025

Resumen

La potencia de plasma de pulverización afecta el rendimiento de la unión del túnel ferroeléctrico (FTJ) al alterar la densidad de la trampa. La optimización de las condiciones de plasma minimiza el ruido, mejora la memoria y los dispositivos neuromórficos al tiempo que garantiza la confiabilidad.

Área de la Ciencia:

Ciencias de los materiales
Física del estado sólido
Ingeniería de dispositivos

Sus antecedentes:

Las uniones de túneles ferroeléctricos (FTJ) basadas en HfZrO2 (HZO) son prometedoras para aplicaciones de memoria y neuromórficas.
Los procesos de pulverización de plasma pueden introducir defectos que influyen en las características eléctricas del dispositivo.

Objetivo del estudio:

Investigar cómo los daños inducidos por la pulverización plasmática afectan las propiedades estocásticas de los FTJ basados en HZO.
Optimizar el rendimiento del dispositivo para aplicaciones de memoria y neuromórficas mediante el control de defectos inducidos por plasma.

Principales métodos:

Se utilizó la espectroscopia de ruido de baja frecuencia (LFN) para analizar las características estocásticas.
Se realizaron mediciones eléctricas dependientes de la temperatura.
La potencia de pulverización de plasma fue variada sistemáticamente durante la deposición del electrodo superior.

Principales resultados:

El aumento de la potencia de pulverización de plasma condujo a una mayor densidad de trampa en la capa HZO.
La mayor densidad de trampa promovió la conducción de Poole-Frenkel y aumentó la magnitud del ruido de corriente.
Se observó una mayor densidad de corriente y la relación de electrorresistencia del túnel ferroeléctrico (TER), pero con mayores fluctuaciones estocásticas.

Conclusiones:

Las condiciones del proceso de plasma influyen de manera crítica en la densidad de la trampa, el LFN y el rendimiento del dispositivo en los FTJ.
La optimización de los parámetros de pulverización puede minimizar el ruido estocástico al tiempo que mejora el rendimiento eléctrico.
Este estudio proporciona directrices para el desarrollo de sistemas de memoria y neuromórficos fiables basados en ferroeléctricos de próxima generación.

Palabras clave:

Cruce de túneles ferroviarios eléctricos Ruido de baja frecuencia (LFN)Daño inducido por plasma Estocasticidad Formación de trampa

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