Mejora de la interferencia de la onda de espín en las nanohojas de NiO en el sustrato de SiO2/Al

Han Han1, Nan An1, Tianyu Fang1

  • 1Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, China.

Resumen

Los investigadores mejoraron las señales débiles de ondas de espín en las nanohojas de óxido de níquel (NiO) utilizando dispersión de Raman mejorada por interferencia (IERS). Esta técnica mejora la detección para aplicaciones espintrónicas.

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