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20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
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Amplificador de clase Joule de ultravioleta profundo de alta energía y campo fuerte basado en chips con enfriamiento
Optics letters
|December 15, 2025
Resumen
Se desarrolló un nuevo sistema láser de ultravioleta profundo (DUV) de alta energía utilizando tecnología de enfriamiento distribuido en la cara (DFC). Este sistema logra una energía de pulso de clase Joule a temperatura ambiente, adecuado para aplicaciones como la deposición de láser pulsado.
Área de la Ciencia:
- Física de Láseres
- Ciencia de Materiales
Sus antecedentes:
- Los láseres pulsados de alta energía son cruciales para el procesamiento avanzado de materiales.
- Los sistemas existentes a menudo enfrentan desafíos de gestión térmica, lo que limita el rendimiento.
Objetivo del estudio:
- Desarrollar un sistema de pulsos de ultravioleta profundo (DUV) de alta energía y campo fuerte.
- Aprovechar la tecnología de enfriamiento distribuido en la cara (DFC) para mejorar la gestión térmica.
Principales métodos:
- Se utilizó un láser de estado sólido bombeado por diodo.
- Se empleó un amplificador de clase Joule subnanosegundo basado en chips DFC con Nd:YAG y zafiro.
- Se operó a una frecuencia de repetición de 20 Hz, con ajuste flexible de la energía del pulso y la frecuencia de repetición.
Principales resultados:
- Se logró una energía de pulso de 235 mJ a 266 nm.
- Se demostró una duración de pulso subnanosegundo de 480 ps.
- Se alcanzó una potencia pico de 0.49 GW, comparable a los láseres de excímeros.
Conclusiones:
- La tecnología de chips DFC permite una energía de pulso de clase Joule a temperatura ambiente con efectos térmicos mínimos.
- El sistema láser DUV desarrollado es adecuado para aplicaciones de deposición de láser pulsado.
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