Ferroelectricidad Interfacial Ajustable Espacialmente en WTe2 de Baja Simetría

Yi-Cheng Chiang1, Chun-An Chen1,2, Che-Min Lin3

  • 1Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan.

Nano letters
|December 17, 2025
PubMed
Resumen

La ferroelectricidad interfacial en 1T′-WTe2 de baja simetría es ajustable espacialmente mediante el control del número de capas. Este descubrimiento impulsa el desarrollo de dipolos conmutables en materiales de van der Waals con potencial para dispositivos electrónicos novedosos.

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