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Updated: Jan 8, 2026

Chemical Precipitation Method for the Synthesis of Nb2O5 Modified Bulk Nickel Catalysts with High Specific Surface Area
Published on: February 19, 2018
Impulso del rendimiento de la reacción de evolución de oxígeno mediante catalizadores de Ni soportados en zeolita 4A
Xiuzhen Xie1,2, Chenglu Hu1,3, Cao Luo1
1College of Chemistry and Material Science, Longyan University, Longyan 364012, Fujian Province, People's Republic of China. xiexiuzhen@lyun.edu.cn.
Abstract:
The development of efficient and stable electrocatalysts for the oxygen evolution reaction (OER) is crucial for renewable energy conversion and storage systems. In this study, a series of 4A zeolite-supported Ni (4A/xNi, x = 20, 40, 60, 80 wt%) materials were synthesized via a facile hydrothermal method. The physicochemical properties of the 4A/xNi materials were thoroughly characterized using powder X-ray diffraction (PXRD), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), Brunauer-Emmett-Teller method (BET), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), inductively coupled plasma analysis (ICP), and electrochemical tests. The specific surface area of the 4A/80 wt% Ni product was approximately 25 times greater than that of the pristine 4A zeolite. The electrochemical performance of these materials was evaluated using linear sweep voltammetry (LSV). The 4A/60 wt% Ni sample exhibited superior catalytic activity, with low onset potential (1.389 V vs. RHE), low Tafel slope (19 mV dec-1), and low ohmic resistance (157 Ω) compared to the 4A zeolite. Moreover, the largest capacitance density (Cdl) of 98.3 μF cm-2 was recorded for 4A/60 wt% Ni, indicating its high electrochemical active surface area. These results demonstrate that the as-prepared 4A/xNi (x = 20, 40, 60, 80 wt%) materials are promising electrodes for OER applications, showcasing their potential as efficient and durable catalysts for electrochemical water splitting.
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