Láseres de cavidad vertical de emisión superficial (VCSEL) MEMS bidireccionales de 1310 nm de alta velocidad y...

We demonstrate the first bidirectional 1310 nm MEMS VCSELs with MHz-range sweep rates, fabricated on a silicon platform by wafer-bonding InP epitaxy onto a processed and polished SOI wafer. Two device configurations are analyzed, projecting a tuning range exceeding 100 nm, making them highly suitable for optical coherence tomography applications. A semiconductor cavity dominant MEMS VCSEL, fabricated via vacuum bonding, achieved a continuous tuning range of 58 nm at a resonant frequency of 2.4 MHz. In comparison, a device incorporating an anti-reflection coating at the bonding interface achieved a continuous tuning range of 30.5 nm at a resonant frequency of 2.48 MHz.