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Dispositivos de silicio sobre aislante (SOI) de obleas completas de CMOS para compresión temporal de pulsos integrada

Ju Won Choi1, Kenny Y K Ong1, Masaki Kato2

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Los investigadores demuestran la compresión óptica de pulsos basada en silicio utilizando procesos de fundición de CMOS. Esta tecnología permite pulsos ultracortos para aplicaciones avanzadas y una integración perfecta con los circuitos fotónicos existentes.

Palabras clave:
óptica no linealfotónica de siliciocompresión temporal de pulsosfabricación a escala de obleas

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Área de la Ciencia:

  • Fotónica e Ingeniería Óptica
  • Ciencia e Ingeniería de Materiales

Sus antecedentes:

  • Los pulsos ópticos son críticos para la transmisión de datos, la imagen y la investigación científica.
  • Lograr pulsos ópticos ultracortos es clave para mejorar la resolución y la capacidad de datos.
  • Se necesita compresión de pulsos integrada y compatible con CMOS para una adopción generalizada en la fotónica de silicio.

Objetivo del estudio:

  • Demostrar experimentalmente la compresión óptica de pulsos basada en silicio utilizando procesos de fundición de CMOS.
  • Desarrollar dispositivos fotónicos integrados para la compresión temporal de pulsos ópticos.
  • Permitir la fabricación en masa y la integración de la tecnología de compresión de pulsos.

Principales métodos:

  • Se utilizó un enfoque de dos etapas que involucra autofase modulada a través de la no linealidad de Kerr en silicio.
  • Se empleó la compresión temporal de solitones de Bragg.
  • Se fabricaron dispositivos utilizando un proceso de fundición de CMOS a escala de oblea en silicio sobre aislante.

Principales resultados:

  • Se logró una compresión temporal de pulsos ópticos de hasta 3,6×.
  • Se demostró una buena concordancia entre los resultados experimentales y los cálculos numéricos.
  • Se realizaron con éxito dispositivos eficientes de silicio sobre aislante para la compresión temporal.

Conclusiones:

  • La compresión de pulsos basada en silicio es factible utilizando procesos estándar de fundición de CMOS.
  • Los dispositivos desarrollados pueden fabricarse en masa e integrarse con otros circuitos fotónicos y electrónicos.
  • Este trabajo allana el camino para aplicaciones avanzadas que requieren pulsos ópticos ultracortos.