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Transistores orgánicos flexibles de canal n con baja resistencia de contacto

Sabrina Steffens¹, Tobias Wollandt¹, Karla Cordero-Solano¹

¹Max Planck Institute for Solid State Research, Heisenbergstraße 1, Stuttgart 70569, Germany.

ACS applied materials & interfaces

|December 22, 2025

Resumen

Los investigadores desarrollaron transistores de película delgada (TFT) orgánicos de canal n utilizando semiconductores novedosos. Los contactos funcionalizados con 4-(metilsulfanil)-tiofenol lograron una resistencia de contacto récord en sustratos de silicio y flexibles, demostrando una excelente estabilidad de flexión.

Área de la Ciencia:

Electrónica orgánica
Ciencia de materiales
Física de semiconductores

Sus antecedentes:

Los avances en semiconductores orgánicos son cruciales para el desarrollo de dispositivos electrónicos flexibles y de bajo costo.
La mejora de la inyección y el transporte de carga en los transistores orgánicos de película delgada (TFT) de canal n sigue siendo un desafío clave.
La resistencia de contacto impacta significativamente el rendimiento de los TFT orgánicos.

Objetivo del estudio:

Fabricar y caracterizar TFT orgánicos de canal n utilizando tres semiconductores orgánicos prometedores de molécula pequeña.
Investigar el efecto de la funcionalización de contactos en el rendimiento del dispositivo, particularmente en la resistencia de contacto.
Evaluar el rendimiento del dispositivo tanto en sustratos rígidos de silicio como poliméricos flexibles.

Principales métodos:

Fabricación de TFT de canal n invertidos escalonados e invertidos coplanares utilizando TAPP-Br4, ActivInk N1100 y PhC2-BQQDI.
Funcionalización de contactos de fuente y drenaje con cuatro tioles diferentes, incluido el 4-(metilsulfanil)-tiofenol (MeSTP).
Caracterización eléctrica de TFT en sustratos de silicio y flexibles en condiciones ambientales.

Principales resultados:

Los TFT basados en PhC2-BQQDI con contactos funcionalizados con MeSTP exhibieron el mejor rendimiento.
Se lograron resistencias de contacto récord de 130 Ω cm (silicio) y 210 Ω cm (sustratos flexibles).
Los TFT en sustratos flexibles demostraron una excelente estabilidad de flexión y rendimiento en aire ambiente.

Conclusiones:

La funcionalización de contactos con MeSTP minimiza eficazmente la resistencia de contacto en los TFT orgánicos de canal n debido a su baja función de trabajo efectiva.
Los TFT orgánicos desarrollados muestran potencial para aplicaciones de electrónica flexible de alto rendimiento.
Lograr una baja resistencia de contacto en aire ambiente es un paso importante hacia la electrónica orgánica práctica.

Palabras clave:

estabilidad de flexión estabilidad de polarización-tensión funcionalización de contacto resistencia de contacto estabilidad de aire a largo plazo transistores orgánicos de canal n transistores orgánicos de película delgada semiconductores orgánicos de molécula pequeña

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