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Estudio de la correlación proceso-estructura-propiedad en recubrimientos de CVD-SiC sobre sustratos de grafito

Yanli Huo1, Shouwan Qin2, Yufeng Chen3

  • 1China Building Materials Academy, Beijing, 100024, China. huoyanli@cbma.com.cn.

Scientific reports
|December 30, 2025
PubMed
Resumen

Este estudio optimizó la deposición química de vapor (CVD) de recubrimientos de carburo de silicio (SiC) sobre susceptores de grafito para la fabricación de semiconductores. Los recubrimientos de SiC optimizados exhiben una excelente estabilidad y dureza, cruciales para la epitaxia III-V.

Palabras clave:
CVDFormación de defectosSimulaciones de dinámicaReacción interfacial gas-sólidoRecubrimiento de SiC

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