Video Experimental Relacionado

Updated: Jan 7, 2026

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
09:33

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Published on: June 7, 2019

6.6K

Metasuperficie programable de doble función con energía estática cero basada en metal líquido

Qingdong Cai1, Xiaojian Fu1, Peng Wang1

  • 1State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, China.

Advanced materials (Deerfield Beach, Fla.)
|January 5, 2026
PubMed
Resumen

No abstract available in PubMed .

Palabras clave:
La resonancia magnéticaprogramable de doble funcióncon estructura de rejillael metal líquidocero potencia estática

Más Videos Relacionados

A Method to Manipulate Surface Tension of a Liquid Metal via Surface Oxidation and Reduction
09:20

A Method to Manipulate Surface Tension of a Liquid Metal via Surface Oxidation and Reduction

Published on: January 26, 2016

16.0K
Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

6.2K

Videos de Experimentos Relacionados

Last Updated: Jan 7, 2026

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
09:33

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Published on: June 7, 2019

6.6K
A Method to Manipulate Surface Tension of a Liquid Metal via Surface Oxidation and Reduction
09:20

A Method to Manipulate Surface Tension of a Liquid Metal via Surface Oxidation and Reduction

Published on: January 26, 2016

16.0K
Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

6.2K

Videos de Conceptos Relacionados

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

513
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
513
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

861
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
861
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas
Jove
Visualize
Contáctanos