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Defectos inducidos por láser ultrarrápido en el óxido de β-gallio por debajo del umbral de ablación

Emma DeAngelis1, Christopher Chae1, Sadikul Alam1

  • 1Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States.

ACS applied materials & interfaces
|January 5, 2026
PubMed
Resumen

No abstract available in PubMed .

Palabras clave:
Óxido de galliodaño por láserFase metastableTransformación de faseDefectos puntualesPotencial de superficieLasers ultrarrápidosCálculo de las emisiones de CO2

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