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Updated: Jan 7, 2026

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Ingeniería de dopaje químico de polarización y texturas topológicas en el CuInP Ferroeléctrico de van der Waals

Lei Gao^1,2, Wenhao Li^1,2, Fei Sun^1,2

¹Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centrer for Physical Mechanics and Biophysics, Institute of Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou, P. R. China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

|January 5, 2026

Resumen

No abstract available in PubMed .

Palabras clave:

CuInP2S6 también incluye:Efecto flexoeléctrico estados de polarización múltiple textura polar topológica VdW Ferroeléctricos

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