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Updated: Jan 7, 2026

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Transistor de película delgada InGaO policristalino con aislante de puerta de SiO para sinapsis artificiales de alto

Taebin Lim¹, Solbee Lee¹, Heerak Wi²

¹Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul 02447, South Korea.

ACS applied materials & interfaces

|January 5, 2026

Resumen

No abstract available in PubMed .

Palabras clave:

El recocido de O2 Histeresis en el sentido contrario a las agujas del reloj Migración del vacío de oxígeno InGaO policristalino Transistor sináptico

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