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Updated: Jan 7, 2026

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Transformación Pseudocapacitiva Inducida por MXeno en Sulfuro de Metal de Tipo Batería: Un Paradigma para el

Panji Xu¹, Yubing Li¹, Shuaikai Xu^1,2

¹Center on Nanoenergy Research, School of Physics Science and Technology, Guangxi University, Nanning, P. R. China.

Small (Weinheim an der Bergstrasse, Germany)

|January 5, 2026

Resumen

No abstract available in PubMed .

Palabras clave:

Heteroestructura 0D/2D Mejora capacitiva habilitada con MXene Acoplamiento electrónico de interfaz Confinamiento entre capas Transición pseudocapacitiva

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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