Perfilado de Profundidad a Nanoescala de Dispositivos Optoelectrónicos Utilizando LIBS de UV Profundo

Atchutananda Surampudi1, Mool C Gupta1

  • 1Charles L. Brown Department of Electrical & Computing Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.

ACS omega
|January 8, 2026
PubMed
Resumen

La espectroscopia de emisión atómica inducida por láser (LIBS) de UV profundo logra un perfilado de profundidad elemental a nanoescala a ~10 s de nm. Este método portátil ofrece alta sensibilidad para el análisis en tiempo real de películas delgadas y dispositivos semiconductores.

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