Avances y desafíos del Bi2Te3: Explorando la intersección de la termoelectricidad y las propiedades topológicas

Bi2Te3, a member of quintessential V2VI3 chalcogenide family, is not only widely utilized as significant thermoelectric (TE) material near room temperature but also an archetypical topological insulator, characterized by topological surface states protected by time-reversal symmetry. Bi2Te3 based materials have garnered global attention due to its excellent TE proficiency, making it ideal for use in highly efficient TE coolers and compact, flexible TE power generators for various electronic devices. Additionally, fascinating topological phenomena, such as the topological insulating behavior, quantum anomalous Hall effect and topological superconductivity observed in Bi2Te3 based samples, have significantly influenced the ongoing research in condensed matter physics. Given its multifunctionality, Bi2Te3 remains a compelling platform for next-generation thermoelectrics, dissipationless electronics, spintronics, magneto-electronic sensors, and terahertz optoelectronics. Precise control of synthesis protocols, microstructures, and strategic manipulation of carrier as well as phonon transport are essential for both successful device operation and experimental realization of unique topological phenomena. This review highlights recent advancements in inherent defect engineering, carrier concentration tuning and band engineering at both bulk and nanoscale level, focusing on their role in phonon transport (thermal conductivity, anharmonicity, and specific heat) and electronic transport of Bi2Te3 based samples. Furthermore, Bi2Te3 based materials are likely to remain a pivotal platform for the exploration and realization of novel topological properties. This motivates us to include a brief overview of physical insights into magneto-transport and quantum transport properties of Bi2Te3 in the review.