Video Experimental Relacionado

Updated: May 30, 2026

Atomically Traceable Nanostructure Fabrication

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

Un modelo 3D de deposición de energía guiado por la energía de activación de la resistencia para la litografía de haz

Yunsheng Deng¹, Shiyang Gao², Jingfu Xu²

¹Pico Center and SUSTech Core Research Facilities, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, CHINA.

|January 13, 2026

Abstract:

We have conducted a detailed investigation of helium ion beam lithography (HIBL) at its resolution limits by calculating three-dimensional energy deposition within a resist. The resist activation energy, a critical physical parameter, was estimated and used as a substitute for the traditional z-factor, allowing for a systematic evaluation of interdependent lithography performances. Our calculations demonstrate HIBL's exceptional capabilities, including 2.5 nm resolution (30kV, PMMA, line-scan), large aspect ratios exceeding 9, a proximity effect range of approximately 10 nm at 100 nm depth, and edge roughness below 1 nm. These findings highlight HIBL's potential for advanced nanofabrication applications. Furthermore, our calculation led to a reliable model for accurate pattern prediction and proximity effect corrections, which was verified by experiment.

Palabras clave:

energía de activación haz de iones de helio litografía efecto de proximidad límite de resolución rugosidad simulación

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