Modelado de elipsometría espectroscópica magneto-óptica de terahercios con aproximación de lámina conductora para...

We present a simplified model for analyzing the reflection coefficients of anisotropic semiconductor thin films in terahertz magneto-optical ellipsometry. Derived from electromagnetic boundary conditions, the model is valid when the film thickness is much smaller than the wavelength. Its applicability is demonstrated through terahertz time-domain spectroscopic ellipsometry of two doped GaAs thin films under an external magnetic field. The approach allows direct extraction of sheet conductivity spectra and accurately reproduces the observed magneto-optical response, offering a non-invasive method for characterizing various thin-film materials.