Jove
Visualize
Contáctanos
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas

Videos de Conceptos Relacionados

Atomic Emission Spectroscopy: Interference01:30

Atomic Emission Spectroscopy: Interference

597
In atomic emission spectroscopy (AES), high-temperature atomizers excite a broad range of elements and molecules that generate complex emissions from sources such as oxides, hydroxides, and flame combustion products in the flame or plasma. Several strategies can be employed to minimize spectral interferences caused by overlapping emission lines or bands. These include increasing instrument resolution, choosing alternative emission lines, optimally placing the detector in low-background regions,...
597
Interference and Diffraction02:18

Interference and Diffraction

51.7K
Interference is a characteristic phenomenon exhibited by waves. When two electromagnetic waves interact with their peaks and troughs coinciding, a resulting wave with enhanced amplitude is produced. This is known as constructive interference. In this case, the two waves interacting are in phase with each other.
51.7K
Atomic Absorption Spectroscopy: Interference01:25

Atomic Absorption Spectroscopy: Interference

2.0K
Interference leads to systematic error in atomic absorption (AA) measurements by enhancing or diminishing the analytical signal or the background. These interferences can be grouped into three main categories: spectral interference, chemical interference, and physical interference.
Spectral interference occurs when signals from other elements or molecules overlap with the analyte signal, falsely elevating or masking the analyte's absorbance. This interference can be corrected using Zeeman,...
2.0K
Inductively Coupled Plasma-Mass Spectrometry (ICP-MS): Interferences01:20

Inductively Coupled Plasma-Mass Spectrometry (ICP-MS): Interferences

1.3K
Inductively coupled plasma–mass spectrometry (ICP–MS) is a highly selective and sensitive technique for accurate elemental analysis. Though the analysis of ICP–MS mass spectra is comparatively straightforward, it is affected by spectroscopic and non-spectroscopic interferences. Spectroscopic interferences arise when the plasma contains ionic species with an m/z value the same as the analyte ion. Spectroscopic interference can be categorized as isobaric, polyatomic ions, and...
1.3K
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

1.2K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.2K
Displacement Current01:19

Displacement Current

3.7K
Ampère's law, in its usual form, does not work in places where the current changes with time and is not steady. Thus, Maxwell suggested including an additional contribution, called the displacement current, Id, to the real conduction current I.
3.7K

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por
Same author

Synthesis of 2-Acylpyrroles and 5,6-Dihydro-4<i>H</i>-furo[3,4-<i>c</i>]pyrrol-4-ones via Silver/Base Promoted Intramolecular Hydroalkylation and Oxidation of Propargylamines.

The Journal of organic chemistry·2026
Same author

Long-range spatial extension of exciton states in van der Waals heterostructure.

Nature communications·2026
Same author

Scalable Manufacturing and Precise Patterning of Perovskites for Light-Emitting Diodes.

Nano-micro letters·2026
Same author

Nanoprinting with Crystal Engineering for Perovskite Lasers.

ACS nano·2025
Same author

The BAHD acyltransferase STBR1 confers both saline-alkali tolerance and blast resistance by stabilizing the non-canonical catalase CATA to promote H<sub>2</sub>O<sub>2</sub> scavenging in rice.

Plant communications·2025
Same author

Multidimensional Additive Manufacturing for Perovskite Optoelectronic Devices.

Advanced materials (Deerfield Beach, Fla.)·2025
Same journal

Gaussian-modulated continuous-variable quantum key distribution over 60 km fiber using an integrated silicon photonic receiver.

Optics letters·2026
Same journal

E2E-OCT: end-to-end joint learning model using optical coherence tomography images for vocal cord leukoplakia diagnosis.

Optics letters·2026
Same journal

Holographic generation of panoramic 3D scenes by concave ellipsoidal mirror reflection.

Optics letters·2026
Same journal

Dual-pilot phase recovery with pair-wise maximum-ratio combining for coherent PONs.

Optics letters·2026
Same journal

Mapping the whispering gallery modes of a CaF<sub>2</sub> disk resonator with half-tapered fibers to estimate the fundamental mode volume.

Optics letters·2026
Same journal

Quantitative estimation of deep-subwavelength scale via dark-field scattering axial energy concentration decay profiles.

Optics letters·2026
Ver todos los artículos relacionados

Video Experimental Relacionado

Updated: Jan 17, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.6K

Dislocaciones de interferencia adyacentes al punto de emisión

J R Leonard, L H Fowler-Gerace, Zhiwen Zhou

    Optics letters
    |January 15, 2026
    PubMed
    Resumen
    Este resumen es generado por máquina.

    Se observaron dislocaciones de interferencia, o bifurcaciones, en emisiones de excitones dentro de dicalcogenuros de metales de transición y heterostructures. Estas dislocaciones surgen del efecto Moiré, incluso en sistemas clásicos sin coherencia, ampliando su rango de observación potencial.

    Palabras clave:
    dislocaciones de interferenciaefecto Moiréemisiones de excitonessistemas clásicosheterostructuresdicalcogenuros de metales de transición

    Más Videos Relacionados

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
    11:14

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

    Published on: May 28, 2016

    14.3K
    Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
    07:50

    Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

    Published on: July 17, 2015

    11.6K

    Videos de Experimentos Relacionados

    Last Updated: Jan 17, 2026

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
    06:57

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

    Published on: July 17, 2020

    2.6K
    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
    11:14

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

    Published on: May 28, 2016

    14.3K
    Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
    07:50

    Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

    Published on: July 17, 2015

    11.6K