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Updated: Jan 21, 2026

U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen
Published on: February 21, 2019
Átomos individuales de Ir de alta valencia mejoran la electrocatálisis de evolución de oxígeno
Runxin Li1, Yangyang Dong1, Heng Xu2
1College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China. jiexu@wzu.edu.cn.
Abstract:
High-valent metal single atoms generally exhibit exceptional electrocatalytic activity because of their rapid electron-transfer kinetics. However, their synthesis remains a formidable challenge owing to intrinsic instability under typical preparation conditions. Herein, atomically dispersed Ir3+ single atoms were successfully stabilized on a NiS2 matrix via a substitutional replacement of Ni lattice sites by Ir, followed by coordination with adjacent S atoms. The resulting catalyst delivers outstanding oxygen evolution reaction (OER) performance, achieving a current density of 10 mA cm-2 at an overpotential of only 190 mV. Density-functional theory (DFT) calculations reveal that the high oxidation state of Ir upshifts the Ni d-band center toward the Fermi level, thereby strengthening OOH* adsorption and accelerating the OER kinetics. This work not only provides a robust strategy for constructing high-valent single-atom catalysts but also highlights the pivotal role of sulfide supports in stabilizing high oxidation states for advanced electrocatalysis.
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