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Updated: Jan 31, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Transistores de efecto de campo a partir de paredes de dominio cargadas artificiales en ferroeléctricos apilados de
Shahriar Muhammad Nahid1, Haiyue Dong2, Gillian M Nolan3
1Department of Mechanical Science and Engineering, Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, USA.
Los investigadores crearon paredes de dominio cargadas ferroeléctricas artificiales en el plano (CDW) en heterouniones de Van der Waals. Estas nuevas CDW exhiben una conductividad significativamente mejorada, allanando el camino para dispositivos electrónicos avanzados.
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