Jove
Visualize
Contáctanos
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas

Videos de Conceptos Relacionados

Atomic Structure01:33

Atomic Structure

210.3K
Overview
210.3K
Atomic Mass01:52

Atomic Mass

70.4K
Atoms — and the protons, neutrons, and electrons that compose them — are extremely small. For example, a carbon atom weighs less than 2 × 10−23 g. When describing the properties of tiny objects such as atoms, we use appropriately small units of measure, such as the atomic mass unit (amu). The amu was originally defined based on hydrogen, the lightest element, then later in terms of oxygen. Since 1961, it has been defined with regard to the most abundant isotope of carbon, atoms of which...
70.4K
Atomic Orbitals02:44

Atomic Orbitals

44.6K
An atomic orbital represents the three-dimensional regions in an atom where an electron has the highest probability to reside. The radial distribution function indicates the total probability of finding an electron within the thin shell at a distance r from the nucleus. The atomic orbitals have distinct shapes which are determined by l, the angular momentum quantum number. The orbitals are often drawn with a boundary surface, enclosing densest regions of the cloud.
44.6K
The Quantum-Mechanical Model of an Atom02:45

The Quantum-Mechanical Model of an Atom

59.0K
Shortly after de Broglie published his ideas that the electron in a hydrogen atom could be better thought of as being a circular standing wave instead of a particle moving in quantized circular orbits, Erwin Schrödinger extended de Broglie’s work by deriving what is now known as the Schrödinger equation. When Schrödinger applied his equation to hydrogen-like atoms, he was able to reproduce Bohr’s expression for the energy and, thus, the Rydberg formula governing hydrogen spectra.
59.0K
Hybridization of Atomic Orbitals I03:24

Hybridization of Atomic Orbitals I

67.7K
The mathematical expression known as the wave function, ψ, contains information about each orbital and the wavelike properties of electrons in an isolated atom. When atoms are bound together in a molecule, the wave functions combine to produce new mathematical descriptions that have different shapes. This process of combining the wave functions for atomic orbitals is called hybridization and is mathematically accomplished by the linear combination of atomic orbitals. The new orbitals that...
67.7K
The Energies of Atomic Orbitals03:21

The Energies of Atomic Orbitals

30.3K
In an atom, the negatively charged electrons are attracted to the positively charged nucleus. In a multielectron atom, electron-electron repulsions are also observed. The attractive and repulsive forces are dependent on the distance between the particles, as well as the sign and magnitude of the charges on the individual particles. When the charges on the particles are opposite, they attract each other. If both particles have the same charge, they repel each other.
30.3K

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por
Same author

[Indication and timing of biologics in the treatment of CRSwNP].

Lin chuang er bi yan hou tou jing wai ke za zhi = Journal of clinical otorhinolaryngology head and neck surgery·2026
Same author

Interaction between fatty pancreas disease and genetically predicted glucose-dependent insulinotropic polypeptide on incident type 2 diabetes: evidence from the UK Biobank.

Frontiers in endocrinology·2026
Same author

Transfer-printed yellow and red InGaN micro-LEDs on diamond for ultra-low-power high-speed optical interconnects.

Nature communications·2026
Same author

Efficacy and Safety of Dupilumab in Chinese Adult Patients With Chronic Rhinosinusitis With Nasal Polyps: A Randomized, Placebo-Controlled, Phase III Trial.

Allergy·2026
Same author

Performance enhancement of chitosan/hydroxypropyl starch blend casing by cinnamaldehyde cross-linking and its application in sausage preservation.

International journal of biological macromolecules·2026
Same author

Photoinduced Metal-to-Insulator Transitions in 2D Moiré Devices.

Physical review letters·2026

Video Experimental Relacionado

Updated: Feb 8, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

6.8K

Cuantificación no destructiva de defectos atómicos en materiales y dispositivos bidimensionales

Yucheng Yang1, Kaikui Xu1, Tara Peña2

  • 1Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States.

ACS applied materials & interfaces
|February 6, 2026
PubMed
Resumen

La microscopía de fuerza lateral (LFM) ofrece un método rápido y no destructivo para mapear defectos atómicos en semiconductores 2D como WSe2 y WS2. Esta técnica supera la sensibilidad de la espectroscopia Raman, ayudando al análisis del crecimiento de materiales y la fabricación de dispositivos.

Palabras clave:
materiales 2Despectroscopía Ramanmicroscopía de fuerza atómicadefectosdispositivosdicalkogenuros de metales de transición

Más Videos Relacionados

Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics
10:39

Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics

Published on: August 5, 2020

7.4K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.4K

Videos de Experimentos Relacionados

Last Updated: Feb 8, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

6.8K
Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics
10:39

Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics

Published on: August 5, 2020

7.4K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.4K

Área de la Ciencia:

  • Ciencia de Materiales
  • Nanotecnología
  • Ciencia de Superficies

Sus antecedentes:

  • La caracterización de defectos atómicos en semiconductores 2D es vital para optimizar el crecimiento y el rendimiento de los dispositivos.
  • Los métodos actuales de metrología de defectos suelen ser lentos, destructivos o carecen de sensibilidad suficiente.

Objetivo del estudio:

  • Introducir y validar la microscopía de fuerza lateral (LFM) como una técnica no destructiva para la caracterización de defectos atómicos en materiales 2D.
  • Evaluar la sensibilidad y aplicabilidad del LFM en diversos materiales 2D, sustratos y estructuras de dispositivos.

Principales métodos:

  • Se utilizó la microscopía de fuerza lateral (LFM) para mapear defectos superficiales en diseleniuro de tungsteno (WSe2) y disulfuro de tungsteno (WS2) de monocapa.
  • Se aplicó LFM a materiales sobre sustratos de dióxido de silicio (SiO2) y zafiro, así como en transistores de WSe2.
  • Se compararon los límites de detección de defectos de LFM con la espectroscopía Raman convencional.

Principales resultados:

  • El LFM mapeó con éxito defectos superficiales en WSe2 y WS2 sobre diferentes sustratos y en transistores.
  • La técnica detectó densidades de defectos significativamente más bajas que las medibles por espectroscopía Raman.
  • El LFM reveló densidades de defectos más altas en transistores de WSe2 en comparación con películas cultivadas, lo que indica defectos inducidos por la fabricación.
  • Demostró la capacidad del LFM para detectar defectos en materiales 2D suspendidos y soportados por polímeros.

Conclusiones:

  • La microscopía de fuerza lateral (LFM) es un método no destructivo y de alta sensibilidad para la caracterización de defectos atómicos en semiconductores 2D.
  • El LFM proporciona información valiosa para monitorear el crecimiento de materiales 2D e identificar defectos introducidos durante la fabricación de dispositivos.
  • Esta técnica amplía el alcance de la metrología de defectos para aplicaciones avanzadas de materiales 2D.