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Published on: May 31, 2018
Mejora del rendimiento de los diodos emisores de luz de CsSnBr3 mediante dopaje iónico sinérgico y reacción
Qipan Yu1, Yuhan Zhou1, Wenxiao Niu1
1National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, China.
Abstract:
Tin-based perovskites are among the most promising lead-free emitters for perovskite light-emitting diodes (PeLEDs), but their performance is severely hindered by the uncontrolled rapid crystallization and facile oxidation. Here, we report a synergistic bulk-interface strategy for enhancing performance of CsSnBr3 PeLEDs by combining Zn2+ bulk doping with an in situ interfacial reaction. Incorporation of ZnBr2 suppresses Sn vacancies and residual SnBr2 while regulating crystallization to improve film morphology. Concurrently, sodium citrate-modified PEDOT:PSS promotes deprotonation of 6-phosphonylhexyl acid, forming robust coordination bonds that delay crystallization and passivate defects. Benefiting from these dual effects, the optimized devices achieve a record external quantum efficiency for CsSnBr3 PeLEDs. This work highlights the effectiveness of synergistic bulk-interface regulation in tuning crystallization kinetics, providing constructive insights for the development of efficient lead-free perovskite optoelectronics.

