Video Experimental Relacionado
Updated: Feb 19, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Avances y desafíos futuros en tecnologías monolíticas de integración 3D de lógica, potencia y optoelectrónica para
Haksoon Jung1, Joonghoon Choi2, Seunghun Baek3
1Department of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Eonyang-eup, Ulju-gun, Ulsan 44919, Republic of Korea.
La computación de alto rendimiento requiere una integración avanzada. La integración monolítica 3D con materiales 2D e interconexiones fotónicas ofrece soluciones para hardware de IA de próxima generación, abordando los desafíos de ancho de banda y térmicos.
Videos de Conceptos Relacionados
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

