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Novedoso semiconductor de selenuro tipo espinela ZnSc2Se4 y su solución sólida con sulfuro para fotovoltaica
Kota Hanzawa1, Ryoga Nagasawa1, Hidenori Hiramatsu1,2
1Materials and Structures Laboratory, Institute of Integrated Research, Institute of Science Tokyo, 4259 Nagatsuta, Midori, Yokohama 226-8501, Japan. hiramatsu.h.aa@m.titech.ac.jp.
Abstract:
It has recently been reported that the spinel-type sulfide (Zn,Mg)Sc2S4 possesses optoelectronic properties, including both n- and p-type dopability and strong visible-light emission. Herein, we present a novel isomorphic selenide, ZnSc2Se4, synthesized using a high-pressure synthesis technique, which exhibits n-type semiconducting behavior. Additionally, a solid solution between ZnSc2S4 and ZnSc2Se4 is realized over the entire composition range, enabling continuous tuning of the direct optical band gap from 2.07 to 1.35 eV (visible to near-infrared) by adjusting the S/Se ratio, accompanied by a sharp enhancement in electrical conductivity. These results revealed that the spinel-type chalcogenide system is a highly promising platform for photovoltaic absorbers. Furthermore, by substituting isovalent Mg [(Zn1-zMgz)Sc2(S1-xSex)4], the band gap can be precisely controlled across nearly the entire visible region (2.86-1.35 eV), providing additional tunability for high-efficiency light-absorption and emission applications within the same host lattice.
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